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Detection Devices

Detection devices are an essential subset of the entire line of photonics products that encompass devices that are used for detecting the characteristics of light in the UV, VIS, NIR, and IR spectral ranges.

Product	Wavelength Range	Active Area	Sensing Area	Availability	Price (USD)
Power Meter incl. Sensor	365 nm (Calibrated) 320 - 400 nm	0.7854 mm²	Ø 1 mm	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232, USB 2.0 Wavelength Range 365 nm (Calibrated) 320 - 400 nm Operating Temperature 0 - 40 °C Active Area 0.7854 mm² Sensing Area Ø 1 mm Detection Wavelength Region UV Peak Response Wavelength 370 nm (Maximum) Irradiance Range 0.1 - 1 × 10⁵ mW/cm² Storage Temperature -20 to 60 °C Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	1790.0 mm²	293.4 x 6.1 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications Imaging, X-Ray Power Consumption ~ 30 W Active Area 1790.0 mm² Sensing Area 293.4 x 6.1 mm Supply Voltage 15 V Resolution (Pixels) 6144 x 128 Line Rate 2.109 kHz (6.073 m/min) 1.858 kHz (10.702 m/min) Bit Depth 16 bit Scanning Method Time Delay Integration Tube Voltage Range ~ 25 - 90 kV Line Speed 0.178 m/min to 6.073 m/min Power Supply DC +15 V Scintillator FOS (Fiber optic plate with scintillator) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	3318.0 mm²	Ø 65 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 76 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 3318.0 mm² Sensing Area Ø 65 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage 1.75 kV Sensor Type Bialkali Photocathode Dark Current 100 nA (Maximum, After 30 Min) 15 nA (Typical, After 30 Min) Active Area Diameter 65 mm Rise Time 1.9 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Pulse Linearity 60 mA (Anode, 5% Deviation) 30 mA (Anode, 2% Deviation) Radiant Sensitivity 7.1 × 10⁵ A/W (Anode, Typical) 0.076 A/W (Cathode, Typical) Anode to Cathode Voltage 2 kV Transit Time Spread 400 ps (Typical) Blue Sensitivity Index 9.5 (Typical, Cathode) Dynode Stages 10 Transit Time 26 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 85 μA/lm (Typical, Cathode), 70 μA/lm (Minimum, Cathode), 800 A/lm (Typical, Anode) Gain 9.4 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	420 nm (Peak Sensitivity) 300 - 650 nm	176.71455 mm²	Ø 15 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 23.5 mm 19 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 176.71455 mm² Sensing Area Ø 15 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage -1.5 kV Dark Current 50 nA (Maximum, After 30 Min) 3 nA (Typical, After 30 Min) Active Area Diameter 15 mm Rise Time 1.8 ns (Typical) Photocathode Material Bialkali Anode Current 430 μA (Maximum) Pulse Linearity 8 mA (Anode, 5% Deviation) 4 mA (Anode, 2% Deviation) Anode to Cathode Voltage -1.8 kV Transit Time Spread 760 ps (Typical) Blue Sensitivity Index 11 (Typical, Cathode) Dynode Stages 10 Transit Time 19 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 115 μA/lm (Typical, Cathode), 200 A/lm (Typical, Anode) Gain 1.7 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	350 - 1000 nm	7.069 mm² (3 mm)	Ø 3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 350 - 1000 nm Key Features Cooled Active Area 7.069 mm² (3 mm) Sensing Area Ø 3 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 600 nm Sensor Type SPAD Cooling System Thermoelectric Active Area Diameter 3 mm Resolution (Pixels) 2836 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
Unmounted Silicon APD	440 - 1100 nm	π × 0.1² mm² (31420.0 μm²)	Ø 200 μm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 440 - 1100 nm Active Area π × 0.1² mm² (31420.0 μm²) Sensing Area Ø 200 μm Detection Wavelength Region Visible, Near IR Peak Response Wavelength 860 nm (Typical) Sensor Type APD, Silicon Dark Current 1 nA (Maximum) Package Metal, TO-18 Active Area Diameter 0.2 mm Capacitance 400 fF (Typical) Detector Bandwidth 400 MHz (Typical) Photosensitivity 0.52 A/W (Typical) Breakdown Voltage 250 V (1.85 V/°C) Gain 100 (Typical) Supplier Location Japan See product details More from HAMAMATSU
Spectrometer	320 - 1000 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface UART, USB Wavelength Range 320 - 1000 nm Key Features Wide Sectral Bandwidth Response Detection Wavelength Region UV, Visible, Near IR Sensor Type Back-Thinned CCD Cooling System None Resolution (Pixels) 2048 Bit Depth 16 bit Spectral Resolution 5 nm (Typical) 8 nm (Maximum) Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	280 - 720 nm 550 - 650 nm (Peak Sensitivity)	78.5398 mm²	Ø 10 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 45 mm Wavelength Range 280 - 720 nm 550 - 650 nm (Peak Sensitivity) Active Area 78.5398 mm² Sensing Area Ø 10 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 550 - 650 nm Sensor Type GaAsP Photocathode Dark Current 3 nA (Typical, After 30 Min) 15 nA (Maximum, After 30 Min) Active Area Diameter 10 mm Rise Time 200 ps (Typical) Photocathode Material GaAsP Anode to Cathode Voltage -2.4 kV Transit Time Spread 130 ps (Typical) Dynode Stages 2 Window Material Borosilicate glass Luminous Sensitivity 700 μA/lm (Typical, Cathode), 400 μA/lm (Minimum, Cathode), 350 A/lm (Typical, Anode) Gain 5 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Power Meter incl. Sensor	310 - 380 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232, USB 2.0 Wavelength Range 310 - 380 nm Weight ~ 170 g (Sensor Head) ~ 300 g (Sensor Head, Cable) Operating Temperature 0 - 40 °C Detection Wavelength Region UV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	400 nm (Peak Sensitivity) 185 - 870 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 30 x 56.5 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 870 nm Applications Single Photon Counting Weight 74 g Key Features Low Dark Counts Low Power Consumption Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Detection Wavelength Region UV, DUV, Visible, Near IR Peak Response Wavelength 400 nm Supply Voltage 2.8 - 5 V 5.5 V (Maximum) Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 3.5 mA (Maximum) Radiant Sensitivity 1.5 × 10⁵ A/W (Anode, Typical) 0.077 A/W (Cathode, Typical) Input Voltage +2.8 V to +5 V, +5.5 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 500 mV - 1.1 V (1 MΩ) Luminous Sensitivity 200 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 100 μA/lm (Minimum, Cathode), 400 A/lm (Typical, Anode) Input Current 3.5 mA (Maximum) Ripple Noise 1 mV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Unmounted Silicon APD	320 - 1000 nm	19.63495 mm² (5 mm)	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 320 - 1000 nm Active Area 19.63495 mm² (5 mm) Sensing Area Ø 5 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 600 nm (Typical) Sensor Type APD, Silicon Dark Current 35 nA (Maximum) Package Metal, TO-8 Active Area Diameter 5 mm Capacitance 55 pF (Typical) Detector Bandwidth 60 MHz (Typical) Photosensitivity 0.24 A/W (Typical) Breakdown Voltage 400 V (0.78 V/°C) Gain 50 (Typical) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 850 nm	40 mm²	5 x 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 51 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 850 nm Active Area 40 mm² Sensing Area 5 x 8 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 420 nm Supply Voltage 1 kV Sensor Type Multialkali Photocathode Rise Time 13 ns (Typical) Photocathode Material Multialkali Anode Current 10 μA (Maximum) Radiant Sensitivity 3.4 × 10⁵ A/W (Anode, Typical) 0.051 A/W (Cathode, Typical) Anode to Cathode Voltage 1.5 kV Dynode Stages 12 Transit Time 70 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 120 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 800 A/lm (Typical, Anode) Gain 6.7 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Portable Laser Power Meter	310 - 380 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232, USB 2.0 Wavelength Range 310 - 380 nm Weight ~ 170 g (Sensor Head) ~ 300 g (Sensor Head, Cable) Key Features Flat Spectral Response Wide Sectral Bandwidth Response Operating Temperature 0 - 40 °C Detection Wavelength Region UV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Streak Camera	200 - 850 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Dimensions 0.15 x 4.5 mm (±5%, Photocathode) Wavelength Range 200 - 850 nm Power Consumption ~ 300 W Detection Wavelength Region UV, Visible, Near IR Supply Voltage 100 V 240 V (50/60 Hz) Sensor Type S20 Photocathode Streak Tube Temporal Resolution < 20 ps Sweep Time 1.2 ns - 1 ms (with ORCA-Flash4.0 V3) Sweep Frequency 4 MHz (Maximum) Power Supply AC 100 V to AC 240 V, 50 Hz/60 Hz Supplier Location Japan See product details More from HAMAMATSU
Spectrometer	300 nm (Minimum) 900 nm (Maximum) 99 nm (with PMT) 197 nm (with PMT) 138 nm (with PMT) 275 nm (with PMT) 214 nm (with PMT) 428 nm (with PMT) 441 nm (with PMT)	502.4 mm²	15.8 x 31.8 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 300 nm (Minimum) 900 nm (Maximum) 99 nm (with PMT) 197 nm (with PMT) 138 nm (with PMT) 275 nm (with PMT) 214 nm (with PMT) 428 nm (with PMT) 441 nm (with PMT) Active Area 502.4 mm² Sensing Area 15.8 x 31.8 mm Detection Wavelength Region UV, DUV, Visible, Near IR Groove Density 1200 grooves/mm, 900 grooves/mm, 600 grooves/mm, 300 grooves/mm Slit Width 7 mm Focal Length ~ 100 mm Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	340 nm (Peak Sensitivity) 185 - 650 nm	48.1 mm²	3.7 x 13 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 19 x 53.2 x 50.8 mm Wavelength Range 340 nm (Peak Sensitivity) 185 - 650 nm Weight 110 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Active Area 48.1 mm² Sensing Area 3.7 x 13 mm Detection Wavelength Region UV, DUV, Visible Peak Response Wavelength 340 nm Supply Voltage ±11.5 V, ±15.5 V ±18 V (Maximum) Supply Current -8 to 15 mA (Maximum) Radiant Sensitivity 0.048 A/W (Cathode, Typical) Input Voltage ±11.5 V to ±15.5 V, ±18 V (Maximum) Settling Time 10 s (Maximum) Blue Sensitivity Index 5 (Typical, Cathode) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 250 mV - 1 V Luminous Sensitivity 40 μA/lm (Typical, Cathode), 5 × 10⁶ V/lm (Minimum, Anode), 20 μA/lm (Minimum, Cathode), 3 × 10⁷ V/lm (Typical, Anode) Output Voltage 1 V (10 kΩ, Maximum) Input Current -8 to 15 mA (Maximum) Ripple Noise 800 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Balanced Detector	1300 nm 900 - 1700 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Dimensions 24 x 54.5 x 65 mm Wavelength Range 1300 nm 900 - 1700 nm Detection Wavelength Region Short-Wave IR Near IR Peak Response Wavelength 1300 nm Sensor Type InGaAs Detector Bandwidth 200 MHz Common-Mode Rejection Ratio 35 dB Supplier Location Japan See product details More from HAMAMATSU
Photodetector Array	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Dimensions 60 x 60 x 22 mm Applications Fluorescence Sensor Type Silicon Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	380.1 mm²	Ø 22 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 25 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 380.1 mm² Sensing Area Ø 22 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage 1.25 kV Sensor Type Bialkali Photocathode Dark Current 15 nA (Maximum, After 30 Min) 2 nA (Typical, After 30 Min) Active Area Diameter 22 mm Rise Time 1.6 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 1.7 × 10⁵ A/W (Anode, Typical) 0.088 A/W (Cathode, Typical) Anode to Cathode Voltage 1.8 kV Blue Sensitivity Index 11 (Typical, Cathode) Dynode Stages 10 Transit Time 17 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 95 μA/lm (Typical, Cathode), 70 μA/lm (Minimum, Cathode), 190 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	1662.0 mm²	Ø 46 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 51 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 1662.0 mm² Sensing Area Ø 46 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage 1.5 kV Sensor Type Bialkali Photocathode Dark Current 40 nA (Maximum, After 30 Min) 6 nA (Typical, After 30 Min) Active Area Diameter 46 mm Rise Time 2.6 ns (Typical) Photocathode Material Bialkali Anode Current 200 μA (Maximum) Radiant Sensitivity 94000 A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage 2.7 kV Blue Sensitivity Index 10.5 (Typical, Cathode) Dynode Stages 12 Transit Time 48 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 90 μA/lm (Typical, Cathode), 30 A/lm (Minimum, Anode), 60 μA/lm (Minimum, Cathode), 100 A/lm (Typical, Anode) Gain 1.1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	375 nm (Peak Sensitivity) 300 - 650 nm	380.1 mm²	Ø 22 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 25 mm (Tube Size) Wavelength Range 375 nm (Peak Sensitivity) 300 - 650 nm Active Area 380.1 mm² Sensing Area Ø 22 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 375 nm Supply Voltage 1 kV Sensor Type Bialkali Photocathode Active Area Diameter 22 mm Rise Time 1.5 ns (Typical) Photocathode Material Low Noise Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 1.1 × 10⁵ A/W (Anode, Typical) 0.055 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 7 (Typical, Cathode) Dynode Stages 10 Transit Time 17 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 50 μA/lm (Typical, Cathode), 45 A/lm (Minimum, Anode), 30 μA/lm (Minimum, Cathode), 100 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Power Meter incl. Sensor	185 nm (Calibrated)	28.27 mm²	Ø 6 mm	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232 Wavelength Range 185 nm (Calibrated) Weight ~ 60 g (Sensor Head) ~ 110 g (Cable) Operating Temperature 0 - 60 °C -20 to 60 °C Active Area 28.27 mm² Sensing Area Ø 6 mm Detection Wavelength Region DUV Irradiance Range 0.001 - 200 mW/cm² Integration Time 1 - 300 s (1 s step) Applicable Light Source Low-pressure mercury lamp Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	400 nm (Peak Sensitivity) 185 - 980 nm	192 mm²	8 x 24 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 400 nm (Peak Sensitivity) 185 - 980 nm Active Area 192 mm² Sensing Area 8 x 24 mm Detection Wavelength Region UV, DUV, Visible, Near IR Peak Response Wavelength 400 nm Supply Voltage 1 kV Sensor Type Multialkali Photocathode Dark Current 50 nA (Maximum, After 30 Min) 5 nA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Photocathode Material Multialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 7.4 × 10⁵ A/W (Anode, Typical) 0.074 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Transit Time Spread 1.2 ns (Typical) Blue Sensitivity Index 8 (Typical, Cathode) Dynode Stages 9 Transit Time 22 ns (Typical) Window Material UV glass Luminous Sensitivity 280 μA/lm (Typical, Cathode), 400 A/lm (Minimum, Anode), 140 μA/lm (Minimum, Cathode), 2800 A/lm (Typical, Anode) Gain 1 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 185 - 650 nm	176.71455 mm²	Ø 15 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 19 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 185 - 650 nm Active Area 176.71455 mm² Sensing Area Ø 15 mm Detection Wavelength Region UV, DUV, Visible Peak Response Wavelength 420 nm Supply Voltage 1 kV Sensor Type Bialkali Photocathode Dark Current 5 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 15 mm Rise Time 2.5 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 85000 A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 10.5 (Typical, Cathode) Dynode Stages 10 Transit Time 27 ns (Typical) Window Material UV glass Luminous Sensitivity 110 μA/lm (Typical, Cathode), 10 A/lm (Minimum, Anode), 70 μA/lm (Minimum, Cathode), 110 A/lm (Typical, Anode) Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
CMOS Camera	300 - 900 nm	146.5281 mm²	14.13 x 10.37 mm	Contact Supplier	Add to cart to request quote
Product Code Interface USB 3.0 Wavelength Range 300 - 900 nm Applications Fluorescence Imaging OEM X-Ray Key Features Board Level Can be Triggered Operating Temperature 0 - 40 °C Power Consumption ~ 6.5 W Active Area 146.5281 mm² Sensing Area 14.13 x 10.37 mm Detection Wavelength Region UV, Visible, Near IR Supply Voltage 12 V Sensor Type CMOS Resolution (Pixels) 4096 x 3008 Pixel Size 3.45 μm (Horizontal) 3.45 μm (Vertical) Read Noise 2.3 e^- (1 ×) Bit Depth 12 bit Lens Mount C-Mount Frame Rate 15 FPS (Full Frame) 57 FPS, 1540 FPS, 4 FPS (2 × 2 Binning, 2 × 2 Binning) Exposure Time 25.45 μs - 1 s 1 ms - 1 s Trigger Mode Edge trigger Synchronous readout trigger Dynamic Range 73.19 dB (4565:1, Typical) Full Well Capacity 10500 e^- Operating Relative Humidity 30 - 80% Power Supply DC+12 V Storage Temperature -10 to 50 °C Digital Binning 2 × 2 Analog Gain 1× to 15.8× (240 steps) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	660 nm (Peak Sensitivity) 300 - 840 nm	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 660 nm (Peak Sensitivity) 300 - 840 nm Weight 100 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 660 nm Supply Voltage 11.5 - 15.5 V Sensor Type GaAsP Photocathode Active Area Diameter 5 mm Rise Time 1 ns (Typical) Dark Count Rate 6.9 kHz (Typical) 20.7 kHz (Maximum) Quantum Efficiency 15% (Cathode, Minimum) 25% (Cathode, Typical) Radiant Sensitivity 0.133 A/W (Cathode, Typical) 0.08 A/W (Cathode, Minimum) 48000 A/W (Anode, Minimum) 1.3 × 10⁵ A/W (Anode, Typical) Input Voltage +18 V (Maximum), +11.5 to +15.5 V Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Gain 2 × 10⁶ (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
NMOS Image Sensor	200 - 1000 nm	32 mm²	12.8 x 2.5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 200 - 1000 nm Applications Low Light Levels Spectrophotometry Key Features High UV sensitivity Low Power Consumption Active Area 32 mm² Sensing Area 12.8 x 2.5 mm Detection Wavelength Region UV, Visible, Near IR Sensor Type NMOS Package Ceramic Cooling System None Resolution (Pixels) 256 x 1 Pixel Size 50 μm x 2.5 mm Line Rate 1.95 kHz Window Material Quartz Supplier Location Japan See product details More from HAMAMATSU
Power Meter incl. Sensor	172 nm (Calibrated)	28.27 mm²	Ø 6 mm	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232 Wavelength Range 172 nm (Calibrated) Weight ~ 60 g (Sensor Head) ~ 110 g (Cable) Operating Temperature 0 - 60 °C -20 to 60 °C Active Area 28.27 mm² Sensing Area Ø 6 mm Detection Wavelength Region DUV Irradiance Range 0.001 - 200 mW/cm² Integration Time 1 - 300 s (1 s step) Applicable Light Source Excimer lamp Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	350 - 1000 nm	1.767 mm² (1.5 mm)	Ø 1.5 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 350 - 1000 nm Active Area 1.767 mm² (1.5 mm) Sensing Area Ø 1.5 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 600 nm Sensor Type SPAD Cooling System None Active Area Diameter 1.5 mm Resolution (Pixels) 724 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	78.5398 mm²	Ø 10 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 13 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 78.5398 mm² Sensing Area Ø 10 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage 1 kV Sensor Type Bialkali Photocathode Dark Current 15 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 10 mm Rise Time 2.1 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 80000 A/W (Anode, Typical) 0.08 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 10 (Typical, Cathode) Dynode Stages 10 Transit Time 22 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 110 μA/lm (Typical, Cathode), 30 A/lm (Minimum, Anode), 40 μA/lm (Minimum, Cathode), 110 A/lm (Typical, Anode) Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	400 nm (Peak Sensitivity) 230 - 870 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 51 x 24 x 25 mm Wavelength Range 400 nm (Peak Sensitivity) 230 - 870 nm Weight 90 g Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 400 nm Supply Voltage ±4.5 V, ±5.5 V ±5.5 V (Maximum) Active Area Diameter 8 mm Supply Current -3.5 to 6.2 mA (Maximum) Radiant Sensitivity 0.077 A/W (Cathode, Typical) Input Voltage ±4.5 V to ±5.5 V, ±5.5 V (Maximum) Settling Time 10 s (Maximum) Current to Voltage Coversion Factor 0.1 V/μA Control Voltage 500 mV - 1.1 V (1 MΩ) Luminous Sensitivity 200 μA/lm (Typical, Cathode), 1 × 10⁷ V/lm (Minimum, Anode), 100 μA/lm (Minimum, Cathode), 4 × 10⁷ V/lm (Typical, Anode) Output Voltage 4 V (10 kΩ, Maximum) Input Current -3.5 to 6.2 mA (Maximum) Ripple Noise 500 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Spectrometer	900 - 2550 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface UART, USB 2.0 Wavelength Range 900 - 2550 nm Key Features Cooled Detection Wavelength Region Short-Wave IR Near IR Sensor Type InGaAs Resolution (Pixels) 256 Bit Depth 16 bit Spectral Resolution 15 nm (Typical) 20 nm (Maximum) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	375 nm (Peak Sensitivity) 300 - 650 nm	1662.0 mm²	Ø 46 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 51 mm (Tube Size) Wavelength Range 375 nm (Peak Sensitivity) 300 - 650 nm Active Area 1662.0 mm² Sensing Area Ø 46 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 375 nm Supply Voltage 1.5 kV Sensor Type Bialkali Photocathode Dark Current 50 nA (Maximum, After 30 Min) 3 nA (Typical, After 30 Min) Active Area Diameter 46 mm Rise Time 2.2 ns (Typical) Photocathode Material High Temperature Bialkali Anode Current 20 μA (Maximum) Radiant Sensitivity 25000 A/W (Anode, Typical) 0.051 A/W (Cathode, Typical) Anode to Cathode Voltage 1.8 kV Blue Sensitivity Index 6 (Typical, Cathode) Dynode Stages 10 Transit Time 28 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 40 μA/lm (Typical, Cathode), 5 A/lm (Minimum, Anode), 20 μA/lm (Minimum, Cathode), 20 A/lm (Typical, Anode) Gain 5 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Photon Counting PMT Module	400 nm (Peak Sensitivity) 185 - 700 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 22 x 36 x 40 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 700 nm Applications Single Photon Counting Weight 47 g Operating Temperature 5 - 40 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Detection Wavelength Region UV, DUV, Visible Peak Response Wavelength 400 nm Supply Voltage 4.75 - 5.25 V 6 V (Maximum) Active Area Diameter 8 mm Supply Current 40 mA (Maximum) Dark Count Rate 100 Hz (Maximum) 50 Hz (Typical) Output Pulse Width 10 ns Input Voltage +4.75 V to +5.25 V, 6 V (Maximum) Input Current 40 mA (Maximum) Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	630 nm (Peak Sensitivity) 230 - 920 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 50 x 18 x 25 mm Wavelength Range 630 nm (Peak Sensitivity) 230 - 920 nm Applications Single Photon Counting Weight 42 g Key Features Low Dark Counts Wide Sectral Bandwidth Response Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 630 nm Supply Voltage 2.8 - 5.5 V 5.5 V (Maximum) Dark Current 100 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 2.7 mA (Maximum) Radiant Sensitivity 1.5 × 10⁵ A/W (Anode, Typical) 0.078 A/W (Cathode, Typical) Input Voltage +2.8 V to +5.5 V, 5.5 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 500 mV - 1.1 V (1 MΩ) Luminous Sensitivity 500 μA/lm (Typical, Cathode), 350 A/lm (Minimum, Anode), 350 μA/lm (Minimum, Cathode), 1000 A/lm (Typical, Anode) Input Current 2.7 mA (Maximum) Ripple Noise 100 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Power Meter incl. Sensor	385 nm (Calibrated) 300 - 470 nm	0.7854 mm²	Ø 1 mm	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232, USB 2.0 Wavelength Range 385 nm (Calibrated) 300 - 470 nm Operating Temperature 0 - 40 °C Active Area 0.7854 mm² Sensing Area Ø 1 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 395 nm (Maximum) Irradiance Range 0.1 - 1 × 10⁵ mW/cm² Storage Temperature -20 to 60 °C Supplier Location Japan See product details More from HAMAMATSU
Unmounted Si Photodiode	190 - 1000 nm	100 mm²	10 x 10 mm	Contact Supplier	Add to cart to request quote
Product Code Interface UART Wavelength Range 190 - 1000 nm Key Features High UV sensitivity Active Area 100 mm² Sensing Area 10 x 10 mm Detection Wavelength Region UV, DUV, Visible, Near IR Peak Response Wavelength 720 nm (Typical) Sensor Type Silicon Dark Current 50 pA (Maximum) Package Ceramic Cooling System None Rise Time 7 μs (Typical) Capacitance 3 nF (Typical) Specific Detectivity 1.25 × 10¹⁴ cmHz^1/2/W (Calculated) Noise Equivalent Power 8 × 10^-15 W/Hz^1/2 (Typical) Reverse Voltage 5 V (Maximum) Photosensitivity 0.36 A/W (Typical) Supplier Location Japan See product details More from HAMAMATSU
Photon Counting PMT Module	230 - 700 nm 400 nm (Peak Sensitivity)	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 22 x 40 x 48 mm Wavelength Range 230 - 700 nm 400 nm (Peak Sensitivity) Applications Single Photon Counting Weight 54 g Operating Temperature 5 - 40 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 400 nm Supply Voltage 6 V (Maximum) Active Area Diameter 8 mm Supply Current 50 mA (Maximum) Dark Count Rate 50 Hz (Typical) 100 Hz (Maximum) Input Voltage USB Bus Power, 6 V (Maximum) Input Current 50 mA (Maximum) Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	896.09 mm²	146.9 x 6.1 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications Imaging, X-Ray Power Consumption ~ 20 W Active Area 896.09 mm² Sensing Area 146.9 x 6.1 mm Supply Voltage 15 V Resolution (Pixels) 3072 x 128 Line Rate 2.109 kHz (6.073 m/min) 1.858 kHz (10.702 m/min) Bit Depth 16 bit Scanning Method Time Delay Integration Tube Voltage Range ~ 25 - 90 kV Line Speed 0.178 m/min to 6.073 m/min Power Supply DC +15 V Scintillator FOS (Fiber optic plate with scintillator) Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	420 nm (Peak Sensitivity) 300 - 880 nm	12.8 mm²	800 μm x 16 mm (x 16 channels)	Contact Supplier	Add to cart to request quote
Product Code Dimensions 30 x 30 mm Wavelength Range 420 nm (Peak Sensitivity) 300 - 880 nm Active Area 12.8 mm² Sensing Area 800 μm x 16 mm (x 16 channels) Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 420 nm Supply Voltage -800 V Dark Current 5 nA (Maximum, After 30 Min) 500 pA (Typical, After 30 Min) Rise Time 600 ps (Typical) Photocathode Material Multialkali Anode Current 370 μA (Maximum) Pulse Linearity 800 μA (Anode, 2% Deviation) Radiant Sensitivity 0.065 A/W (Cathode, Typical) Anode to Cathode Voltage -900 V Transit Time Spread 180 ps (Typical) Dynode Stages 10 Transit Time 7.4 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 250 μA/lm (Typical, Cathode), 75 A/lm (Minimum, Anode), 150 μA/lm (Minimum, Cathode), 250 A/lm (Typical, Anode) Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	350 - 1000 nm	7.069 mm² (3 mm)	Ø 3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 350 - 1000 nm Key Features Cooled Active Area 7.069 mm² (3 mm) Sensing Area Ø 3 mm Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 600 nm Sensor Type SPAD Cooling System Thermoelectric Active Area Diameter 3 mm Resolution (Pixels) 2836 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	400 nm (Peak Sensitivity) 185 - 700 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 60 x 22 x 22 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 700 nm Weight 90 g Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Detection Wavelength Region UV, DUV, Visible Peak Response Wavelength 400 nm Supply Voltage ±11.5 V, ±15.5 V ±16 V (Maximum) Active Area Diameter 8 mm Supply Current -1 to 11 mA (Maximum) Radiant Sensitivity 0.11 A/W (Cathode, Typical) Input Voltage ±11.5 V to ±15.5 V, ±16 V (Maximum) Settling Time 200 ms (Maximum) Blue Sensitivity Index 13.5 (Typical, Cathode) Current to Voltage Coversion Factor 1 V/uA Control Voltage 500 mV - 1.1 V (30 kΩ) Luminous Sensitivity 105 μA/lm (Typical, Cathode), 8 × 10⁷ V/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 2.1 × 10⁸ V/lm (Typical, Anode) Output Voltage 10 V (10 kΩ, Maximum) Input Current -1 to 11 mA (Maximum) Ripple Noise 1 mV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	630 nm (Peak Sensitivity) 300 - 920 nm	5.6 mm²	800 μm x 7 mm (x 32 channels)	Contact Supplier	Add to cart to request quote
Product Code Dimensions 52 x 24 mm Wavelength Range 630 nm (Peak Sensitivity) 300 - 920 nm Active Area 5.6 mm² Sensing Area 800 μm x 7 mm (x 32 channels) Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 630 nm Supply Voltage -800 V Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Rise Time 600 ps (Typical) Photocathode Material Multialkali Anode Current 370 μA (Maximum) Pulse Linearity 800 μA (Anode, 5% Deviation) 600 μA (Anode, 2% Deviation) Anode to Cathode Voltage -900 V Transit Time Spread 180 ps (Typical) Dynode Stages 10 Transit Time 6.8 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 500 μA/lm (Typical, Cathode), 500 A/lm (Typical, Anode) Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Power Meter incl. Sensor	254 nm (Calibrated)	28.27 mm²	Ø 6 mm	Contact Supplier	Add to cart to request quote
Product Code Interface RS-232 Wavelength Range 254 nm (Calibrated) Weight ~ 60 g (Sensor Head) ~ 110 g (Cable) Operating Temperature 0 - 60 °C -20 to 60 °C Active Area 28.27 mm² Sensing Area Ø 6 mm Detection Wavelength Region UV Irradiance Range 0.001 - 200 mW/cm² Integration Time 1 - 300 s (1 s step) Applicable Light Source Low-pressure mercury lamp Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	400 nm (Peak Sensitivity) 185 - 900 nm	80 mm²	4 x 20 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 38 x 95 x 50 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 900 nm Applications Single Photon Counting Weight 225 g Key Features Low Dark Counts Operating Temperature 5 - 50 °C Active Area 80 mm² Sensing Area 4 x 20 mm Detection Wavelength Region UV, DUV, Visible, Near IR Peak Response Wavelength 400 nm Supply Voltage 4.5 - 5.5 V 6 V (Maximum) Dark Current 50 nA (Maximum, After 30 Min) 3 nA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Supply Current 3.5 mA (Maximum) Radiant Sensitivity 7.4 × 10⁵ A/W (Anode, Typical) 0.074 A/W (Cathode, Typical) Input Voltage +4.5 V to +5.5 V, 6 V (Maximum) Settling Time 14 s (Maximum) Control Voltage 500 mV - 1.1 V Luminous Sensitivity 250 μA/lm (Typical, Cathode), 400 A/lm (Minimum, Anode), 140 μA/lm (Minimum, Cathode), 2500 A/lm (Typical, Anode) Input Current 3.5 mA (Maximum) Ripple Noise 300 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Hybrid PMT	220 - 870 nm	28.27 mm²	Ø 6 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 220 - 870 nm Operating Temperature 15 - 35 °C Active Area 28.27 mm² Sensing Area Ø 6 mm Detection Wavelength Region UV, Visible, Near IR Sensor Type Multialkali Photocathode Rise Time 400 ps (Typical) Quantum Efficiency 16% (400 nm, Typical) Transit Time Spread 30 ps Fall Time 400 ps (Typical) Cathode Current 200 pA (Maximum, Average) Window Material Synthetic silica ― Gain 1.2 × 10⁵ ― (Typical) Storage Temperature 0 - 40 °C Supplier Location Japan See product details More from HAMAMATSU
Raman Spectrometer	790 - 1050 nm	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface UART, USB 2.0 Wavelength Range 790 - 1050 nm Applications Raman, Spectroscopy Key Features Can be Triggered High Spectral Resolution Low Power Consumption Low Stray Light Detection Wavelength Region Near IR Sensor Type CMOS Cooling System None Resolution (Pixels) 2048 Bit Depth 16 bit Spectral Resolution 0.4 nm (Typical) 0.6 nm (Maximum) Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	420 nm (Peak Sensitivity) 300 - 700 nm	78.5398 mm²	Ø 10 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 14.3 mm 13 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 700 nm Active Area 78.5398 mm² Sensing Area Ø 10 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage -1 kV Dark Current 5 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 10 mm Rise Time 1.2 ns (Typical) Photocathode Material Extended Green Bialkali Anode Current 16 μA (Maximum) Pulse Linearity 12 mA (Anode, 5% Deviation) 3 mA (Anode, 2% Deviation) Radiant Sensitivity 0.105 A/W (Cathode, Typical) Anode to Cathode Voltage -1.25 kV Transit Time Spread 1.4 ns (Typical) Blue Sensitivity Index 14 (Typical, Cathode) Dynode Stages 10 Transit Time 14 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 160 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 120 μA/lm (Minimum, Cathode), 320 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	28352.8678 mm²	Ø 190 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 202 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 28352.8678 mm² Sensing Area Ø 190 mm Detection Wavelength Region UV, Visible Peak Response Wavelength 420 nm Supply Voltage 1.75 kV Sensor Type Bialkali Photocathode Dark Current 1 μA (Maximum, After 30 Min) 500 nA (Typical, After 30 Min) Active Area Diameter 190 mm Rise Time 2.2 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Pulse Linearity 60 mA (Anode, 5% Deviation) 40 mA (Anode, 2% Deviation) Radiant Sensitivity 1.1 × 10⁶ A/W (Anode, Typical) 0.11 A/W (Cathode, Typical) Anode to Cathode Voltage 2.2 kV Transit Time Spread 1 ns (Typical) Blue Sensitivity Index 13.5 (Typical, Cathode) Dynode Stages 10 Transit Time 37 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 105 μA/lm (Typical, Cathode), 1100 A/lm (Typical, Anode) Gain 1 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	410 nm (Peak Sensitivity) 185 - 730 nm	192 mm²	8 x 24 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 410 nm (Peak Sensitivity) 185 - 730 nm Active Area 192 mm² Sensing Area 8 x 24 mm Detection Wavelength Region UV, DUV, Visible Peak Response Wavelength 410 nm Supply Voltage 1 kV Sensor Type Bialkali Photocathode Dark Current 2 nA (Maximum, After 30 Min) 200 pA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Photocathode Material Low Noise Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 1 × 10⁶ A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Transit Time Spread 1.2 ns (Typical) Blue Sensitivity Index 10 (Typical, Cathode) Dynode Stages 9 Transit Time 22 ns (Typical) Window Material UV Luminous Sensitivity 130 μA/lm (Typical, Cathode), 1200 A/lm (Minimum, Anode), 120 μA/lm (Minimum, Cathode), 1560 A/lm (Typical, Anode) Gain 1.2 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU