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Detection Devices

Detection devices are an essential subset of the entire line of photonics products that encompass devices that are used for detecting the characteristics of light in the UV, VIS, NIR, and IR spectral ranges.

Product	Active Area	Capacitance	Package	Availability	Price (USD)
Unmounted Si Photodiode	0.3421 mm² (0.66 mm)	2.6 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 0.3421 mm² (0.66 mm) Capacitance 2.6 pF Package TO-18 Rise Time 1.1 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 10 pA Active Area Diameter 0.66 mm Photosensitivity 0.5 A/W (830 nm, Typical) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	1.69 mm²	5 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 1.69 mm² Capacitance 5 pF Package TO-5 Rise Time 5 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 100 pA Sensing Area 1.3 x 1.3 mm (1.69 mm²) Element Gap 127 μm Photosensitivity 0.52 A/W (790 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	35 mm²	1.6 nF	TO-8	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 200 - 1100 nm Key Features UV Enhanced Response Active Area 35 mm² Capacitance 1.6 nF Package TO-8 Rise Time 3 μs Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Shunt Resistance 30 MΩ Photosensitivity 0.14 A/W (254 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	15 mm²	390 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 360 - 750 nm Key Features Eye Response Active Area 15 mm² Capacitance 390 pF Package TO-5 Sensor Type Silicon Detection Wavelength Region UV, Visible Dark Current 2 nA Sensing Area 3.8 x 3.8 mm (15 mm²) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Amplified Photodiode	50 mm²	2.5 nF	Other	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 200 - 1100 nm Active Area 50 mm² Capacitance 2.5 nF Package Other Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Shunt Resistance 10 MΩ Photosensitivity 0.14 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5.7 mm²	-	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 720 nm (Peak Sensitivity) Key Features UV Enhanced Response Active Area 5.7 mm² Package TO-5 Rise Time 500 ns Sensor Type Silicon Detection Wavelength Region Visible Peak Response Wavelength 720 nm Shunt Resistance 20 GΩ Reverse Voltage 140 V Photosensitivity 0.12 A/W (200 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	0.03237 mm² (0.203 mm)	800 fF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 0.03237 mm² (0.203 mm) Capacitance 800 fF Package TO-18 Rise Time 750 ps Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 30 pA Active Area Diameter 0.203 mm Photosensitivity 0.5 A/W (830 nm, Typical) Supplier Location California, USA See product details More from OSI Optoelectronics
Position-Sensitive Detector	6.45 mm²	20 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Active Area 6.45 mm² Capacitance 20 pF Package TO-5 Rise Time 660 ns Sensor Type Silicon Dark Current 5 nA Sensing Area 2.54 x 2.54 mm (6.45 mm²) Photosensitivity 0.42 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	0.2027 mm² (0.508 mm)	1.8 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 0.2027 mm² (0.508 mm) Capacitance 1.8 pF Package TO-18 Rise Time 1 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 60 pA Active Area Diameter 0.508 mm Photosensitivity 0.5 A/W (830 nm, Typical) Supplier Location California, USA See product details More from OSI Optoelectronics
Position-Sensitive Detector	4 mm²	8 pF	TO-8	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 360 - 1100 nm Active Area 4 mm² Capacitance 8 pF Package TO-8 Rise Time 30 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Sensing Area 2 x 2 mm (4 mm²) Photosensitivity 0.4 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Silicon Photovoltaic Sensor	16.4 mm²	2 nF	TO-8	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Applications High Light Levels Active Area 16.4 mm² Capacitance 2 nF Package TO-8 Rise Time 220 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 970 nm Shunt Resistance 2 GΩ Photosensitivity 0.6 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Silicon Photovoltaic Sensor	189 mm²	17 nF	-	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 970 nm (Peak Sensitivity) Active Area 189 mm² Capacitance 17 nF Sensor Type Silicon Detection Wavelength Region Near IR Peak Response Wavelength 970 nm Shunt Resistance 200 kΩ Sensing Area 9.2 x 20.7 mm (189 mm²) Chip Size 10.2 x 21 mm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5.76 mm²	50 pF	SMT	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 920 nm (Peak Sensitivity) Key Features Back-Illuminated Active Area 5.76 mm² Capacitance 50 pF Package SMT Rise Time 10 μs Sensor Type Silicon Detection Wavelength Region Near IR Dark Current 20 pA Peak Response Wavelength 920 nm Shunt Resistance 500 MΩ Sensing Area 2.4 x 2.4 mm (5.76 mm²) Photosensitivity 0.59 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	1 mm²	35 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Applications High Light Levels Key Features Blue Enhanced Response Active Area 1 mm² Capacitance 35 pF Package TO-18 Rise Time 7 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Shunt Resistance 250 GΩ Photosensitivity 0.21 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5.7 mm²	-	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 720 nm (Peak Sensitivity) Key Features UV Enhanced Response Active Area 5.7 mm² Package Ceramic Rise Time 500 ns Sensor Type Silicon Detection Wavelength Region Visible Peak Response Wavelength 720 nm Shunt Resistance 20 GΩ Reverse Voltage 140 V Photosensitivity 0.12 A/W (200 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	7.069 mm² (3 mm)	750 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 1100 - 1620 nm Active Area 7.069 mm² (3 mm) Capacitance 750 pF Package TO-5 Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Active Area Diameter 3 mm Shunt Resistance 20 MΩ Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Si Photodiode Array	0.004418 mm² (0.075 mm)	160 pF	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Applications X-Ray Active Area 0.004418 mm² (0.075 mm) Capacitance 160 pF Package Ceramic Sensor Type Silicon Active Area Diameter 0.075 mm Photosensitivity 0.5 A/W (1550 nm) Lenslet Pitch 310 μm Number of Elements 76 Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	1.767 mm² (1.5 mm)	200 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 1100 - 1620 nm Active Area 1.767 mm² (1.5 mm) Capacitance 200 pF Package TO-18 Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Active Area Diameter 1.5 mm Shunt Resistance 20 MΩ Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Si Photodiode Array	0.004418 mm² (0.075 mm)	12 pF	40-Pins	Contact Supplier	Add to cart to request quote
Product Code Applications X-Ray Active Area 0.004418 mm² (0.075 mm) Capacitance 12 pF Package 40-Pins Sensor Type Silicon Dark Current 50 pA Active Area Diameter 0.075 mm Photosensitivity 0.65 A/W (1550 nm) Lenslet Pitch 990 μm Number of Elements 38 Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5 mm² (2.5 mm)	130 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 360 - 750 nm Key Features Eye Response Active Area 5 mm² (2.5 mm) Capacitance 130 pF Package TO-5 Sensor Type Silicon Detection Wavelength Region UV, Visible Dark Current 500 pA Active Area Diameter 2.5 mm Supplier Location California, USA See product details More from OSI Optoelectronics
InGaAs Pigtailed Photodiode	0.01131 mm² (0.12 mm)	1 pF	-	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 900 - 1700 nm Active Area 0.01131 mm² (0.12 mm) Capacitance 1 pF Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Dark Current 50 pA Active Area Diameter 0.12 mm Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	16 mm²	330 pF	Plastic, Resin Mold	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 700 - 1100 nm Active Area 16 mm² Capacitance 330 pF Package Plastic, Resin Mold Rise Time 100 ns Sensor Type Silicon Detection Wavelength Region Visible, Near IR Dark Current 5 nA Sensing Area 4 x 4 mm (16 mm²) Photosensitivity 0.55 A/W (970 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Position-Sensitive Detector	103 mm²	300 pF	Other	Contact Supplier	Add to cart to request quote
Product Code Active Area 103 mm² Capacitance 300 pF Package Other Rise Time 1 μs Sensor Type Silicon Dark Current 25 nA Sensing Area 10.16 x 10.16 mm (103 mm²) Photosensitivity 0.42 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Silicon Photovoltaic Sensor	13 mm²	1.2 nF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Applications High Light Levels Active Area 13 mm² Capacitance 1.2 nF Package TO-5 Rise Time 150 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 970 nm Shunt Resistance 3.5 GΩ Photosensitivity 0.6 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Si Photodiode Array	0.004418 mm² (0.075 mm)	170 pF	PCB	Contact Supplier	Add to cart to request quote
Product Code Applications X-Ray Active Area 0.004418 mm² (0.075 mm) Capacitance 170 pF Package PCB Sensor Type Silicon Active Area Diameter 0.075 mm Photosensitivity 0.6 A/W (1550 nm) Lenslet Pitch 1.59 mm Number of Elements 16 Supplier Location California, USA See product details More from OSI Optoelectronics
Solderable Chip Si Photodiode	9.6 mm²	30 pF	-	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 970 nm (Peak Sensitivity) Active Area 9.6 mm² Capacitance 30 pF Sensor Type Silicon Detection Wavelength Region Near IR Dark Current 40 nA Peak Response Wavelength 970 nm Sensing Area 2.3 x 4.2 mm (9.6 mm²) Chip Size 2.5 x 5.1 mm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Silicon Photovoltaic Sensor	5.1 mm²	500 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Applications High Light Levels Active Area 5.1 mm² Capacitance 500 pF Package TO-5 Rise Time 60 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 970 nm Shunt Resistance 4 GΩ Photosensitivity 0.6 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	0.004418 mm² (0.075 mm)	-	TO-46	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 1100 - 1650 nm Active Area 0.004418 mm² (0.075 mm) Package TO-46 Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Active Area Diameter 0.075 mm Detector Bandwidth 30 kHz - 520 MHz Supply Voltage 3 - 3.6 V Supply Current 22 mA Conversion Gain 16000 V/W (-23 dBm) Output Impedance 75 Ω Photosensitivity 16 V/mW (-23 dBm) Power Sensitivity -32 dBm Transimpedance Gain 1800 Ω Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	0.01131 mm² (0.12 mm)	2 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 1100 - 1620 nm Active Area 0.01131 mm² (0.12 mm) Capacitance 2 pF Package TO-18 Rise Time 300 ps Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Dark Current 50 pA Active Area Diameter 0.12 mm Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Position-Sensitive Detector	3 mm²	3 pF	8-Pins	Contact Supplier	Add to cart to request quote
Product Code Active Area 3 mm² Capacitance 3 pF Package 8-Pins Rise Time 40 ns Sensor Type Silicon Sensing Area 3 x 1 mm (3 mm²) Photosensitivity 0.4 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	8.4 mm²	100 pF	Plastic, Resin Mold	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 700 - 1100 nm Active Area 8.4 mm² Capacitance 100 pF Package Plastic, Resin Mold Rise Time 50 ns Sensor Type Silicon Detection Wavelength Region Visible, Near IR Dark Current 10 nA Sensing Area 2.9 x 2.9 mm (8.4 mm²) Photosensitivity 0.55 A/W (970 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Solderable Chip Si Photodiode	82.6 mm²	300 pF	-	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 970 nm (Peak Sensitivity) Active Area 82.6 mm² Capacitance 300 pF Sensor Type Silicon Detection Wavelength Region Near IR Dark Current 500 nA Peak Response Wavelength 970 nm Sensing Area 4.1 x 20.1 mm (82.6 mm²) Chip Size 5.2 x 20.4 mm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Quadrant Si Photodiode	3.25 mm²	11 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 3.25 mm² Capacitance 11 pF Package TO-5 Rise Time 22 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 150 pA Sensing Area 1.3 x 2.5 mm (per Element) Element Gap 127 μm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	0.07069 mm² (0.3 mm)	10 pF	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 900 - 1700 nm Applications Monitor Photodiode Active Area 0.07069 mm² (0.3 mm) Capacitance 10 pF Package Ceramic Rise Time 1.5 ns Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Dark Current 300 pA Active Area Diameter 0.3 mm Reverse Voltage 15 V (Maximum) Maximum Forward Current 8 mA Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Si Photodiode Array	0.004418 mm² (0.075 mm)	340 pF	40-Pins	Contact Supplier	Add to cart to request quote
Product Code Applications X-Ray Active Area 0.004418 mm² (0.075 mm) Capacitance 340 pF Package 40-Pins Sensor Type Silicon Active Area Diameter 0.075 mm Photosensitivity 0.6 A/W (1550 nm) Lenslet Pitch 990 μm Number of Elements 35 Supplier Location California, USA See product details More from OSI Optoelectronics
Two-Color Sensor	2.54 mm², 1.5 mm²	450 pF, 300 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 400 - 1100 nm 1000 - 1700 nm Active Area 2.54 mm², 1.5 mm² Capacitance 450 pF, 300 pF Package TO-5 Rise Time 40 μs, 4 μs Sensor Type InGaAs, Silicon Detection Wavelength Region Short-Wave IR Visible Near IR Peak Response Wavelength 950 nm, 1300 nm Active Area Diameter 2.54 mm, 1.5 mm Shunt Resistance 150 MΩ, 1 MΩ Reverse Voltage 5 V, 2 V Specific Detectivity 1.2 × 10¹³ cmHz^1/2/W, 8.4 × 10¹¹ cmHz^1/2/W Photosensitivity 0.45 A/W, 0.6 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
InGaAs Photodiode Array	0.07069 mm² (0.3 mm)	8 pF	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Active Area 0.07069 mm² (0.3 mm) Capacitance 8 pF Package Ceramic Sensor Type InGaAs Dark Current 50 pA Active Area Diameter 0.3 mm Photosensitivity 0.8 A/W (1310 nm) 0.85 A/W (1550 nm) Lenslet Pitch 500 μm Number of Elements 4 Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	0.004418 mm² (0.075 mm)	650 fF	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 900 - 1700 nm Applications Monitor Photodiode Active Area 0.004418 mm² (0.075 mm) Capacitance 650 fF Package Ceramic Rise Time 200 ps Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Dark Current 30 pA Active Area Diameter 0.075 mm Reverse Voltage 20 V (Maximum) Maximum Forward Current 5 mA Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	3.2 mm²	12 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 3.2 mm² Capacitance 12 pF Package TO-18 Rise Time 10 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 150 pA Peak Response Wavelength 970 nm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Silicon Photovoltaic Sensor	25.8 mm²	2.1 nF	-	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 970 nm (Peak Sensitivity) Active Area 25.8 mm² Capacitance 2.1 nF Sensor Type Silicon Detection Wavelength Region Near IR Peak Response Wavelength 970 nm Shunt Resistance 5 MΩ Sensing Area 5.1 x 5.1 mm (25.8 mm²) Chip Size 5.5 x 6 mm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Position-Sensitive Detector	3 mm²	3 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Active Area 3 mm² Capacitance 3 pF Package TO-5 Rise Time 40 ns Sensor Type Silicon Sensing Area 3 x 1 mm (3 mm²) Photosensitivity 0.4 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted InGaAs Photodiode	0.07069 mm² (0.3 mm)	10 pF	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 900 - 1700 nm Applications Monitor Photodiode Active Area 0.07069 mm² (0.3 mm) Capacitance 10 pF Package Ceramic Rise Time 1.5 ns Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Dark Current 300 pA Active Area Diameter 0.3 mm Reverse Voltage 15 V (Maximum) Maximum Forward Current 8 mA Photosensitivity 0.9 A/W (1310 nm) 0.95 A/W (1550 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
Silicon Photovoltaic Sensor	16.4 mm²	2 nF	TO-8	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Applications High Light Levels Active Area 16.4 mm² Capacitance 2 nF Package TO-8 Rise Time 220 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Peak Response Wavelength 970 nm Shunt Resistance 2 GΩ Photosensitivity 0.6 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5.1 mm²	300 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 200 - 1100 nm Key Features UV Enhanced Response Active Area 5.1 mm² Capacitance 300 pF Package TO-5 Rise Time 900 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Shunt Resistance 200 MΩ Photosensitivity 0.14 A/W (254 nm) Supplier Location California, USA See product details More from OSI Optoelectronics
InGaAs Photodiode Array	0.004418 mm² (0.075 mm)	650 fF	Epoxy	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 1100 - 1620 nm Active Area 0.004418 mm² (0.075 mm) Capacitance 650 fF Package Epoxy Sensor Type InGaAs Detection Wavelength Region Short-Wave IR Near IR Dark Current 30 pA Active Area Diameter 0.075 mm Detector Bandwidth 2 GHz Photosensitivity 0.95 A/W (1550 nm) Lenslet Pitch 250 μm Breakdown Voltage 50 V Number of Elements 16 Supplier Location California, USA See product details More from OSI Optoelectronics
Si Photodiode Array	1 mm²	35 pF	Ceramic	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 810 nm (Peak Sensitivity) Active Area 1 mm² Capacitance 35 pF Package Ceramic Sensor Type Silicon Detection Wavelength Region Near IR Peak Response Wavelength 810 nm Shunt Resistance 10 kΩ Sensing Area 1 x 1 mm (per Element) Photosensitivity 0.4 A/W (900 nm) Crosstalk 0.02% Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	1.1 mm²	5 pF	TO-18	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 1.1 mm² Capacitance 5 pF Package TO-18 Rise Time 10 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 100 pA Peak Response Wavelength 970 nm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5.1 mm²	15 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Active Area 5.1 mm² Capacitance 15 pF Package TO-5 Rise Time 12 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Dark Current 250 pA Peak Response Wavelength 970 nm Photosensitivity 0.65 A/W Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5 mm² (2.57 mm)	300 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 0.07 - 1100 nm Applications X-Ray Active Area 5 mm² (2.57 mm) Capacitance 300 pF Package TO-5 Sensor Type Silicon Detection Wavelength Region UV, DUV, X-Ray, Visible, Near IR Active Area Diameter 2.57 mm Shunt Resistance 2 GΩ Supplier Location California, USA See product details More from OSI Optoelectronics
Unmounted Si Photodiode	5 mm²	130 pF	TO-5	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 350 - 1100 nm Applications High Light Levels Key Features Blue Enhanced Response Active Area 5 mm² Capacitance 130 pF Package TO-5 Rise Time 9 ns Sensor Type Silicon Detection Wavelength Region UV, Visible, Near IR Shunt Resistance 100 GΩ Photosensitivity 0.21 A/W Supplier Location California, USA See product details More from OSI Optoelectronics