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Detection Devices

Detection devices are an essential subset of the entire line of photonics products that encompass devices that are used for detecting the characteristics of light in the UV, VIS, NIR, and IR spectral ranges.

Product	Sensing Area	Active Area	Wavelength Range	Availability	Price (USD)
PMT (tube only)	Ø 11 mm	95.03 mm²	160 - 850 nm 430 nm (Peak Sensitivity)	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 45 mm (Tube Size) Wavelength Range 160 - 850 nm 430 nm (Peak Sensitivity) Sensing Area Ø 11 mm Active Area 95.03 mm² Peak Response Wavelength 430 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Multialkali Photocathode Active Area Diameter 11 mm Rise Time 160 ps (Typical) Photocathode Material Multialkali Radiant Sensitivity 0.07 A/W (Cathode, Typical) Anode to Cathode Voltage -3.4 kV Transit Time Spread 25 ps (Typical) Dynode Stages 2 Window Material Silica glass Luminous Sensitivity 180 μA/lm (Typical, Cathode), 100 μA/lm (Minimum, Cathode), 54 A/lm (Typical, Anode) Gain 3 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Amplified Photodiode	5.8 x 5.8 mm	33.64 mm²	190 - 1100 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 190 - 1100 nm Sensing Area 5.8 x 5.8 mm Active Area 33.64 mm² Supply Voltage ±5 V, ±12 V Peak Response Wavelength 960 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Silicon Detector Bandwidth 1 - 100 kHz Transimpedance Gain 1 × 10⁴ (Low Range), 1 × 10⁶ V/A (High Range) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	Ø 10 mm	78.5398 mm²	420 nm (Peak Sensitivity) 160 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 160 - 650 nm Sensing Area Ø 10 mm Active Area 78.5398 mm² Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, DUV, Visible Sensor Type Bialkali Photocathode Active Area Diameter 10 mm Rise Time 1.7 ns (Typical) Photocathode Material Bialkali Anode Current 10 μA (Maximum) Radiant Sensitivity 7.5 × 10⁵ A/W (Anode, Typical) 0.072 A/W (Cathode, Typical) Anode to Cathode Voltage 1.5 kV Blue Sensitivity Index 9 (Typical, Cathode) Dynode Stages 11 Transit Time 26 ns (Typical) Window Material Quartz Luminous Sensitivity 70 μA/lm (Typical, Cathode), 200 A/lm (Minimum, Anode), 40 μA/lm (Minimum, Cathode), 700 A/lm (Typical, Anode) Gain 1 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
sCMOS Camera	14.98 x 14.98 mm	224.4 mm²	400 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Interface CXP-6, USB 3.0 Wavelength Range 400 - 900 nm Key Features Can be Triggered Operating Temperature 0 - 40 °C Sensing Area 14.98 x 14.98 mm Active Area 224.4 mm² Detection Wavelength Region Visible, Near IR Sensor Type CMOS Cooling System Air, Thermoelectric, Water Resolution (Pixels) 2304 x 2304 Pixel Size 6.5 μm (Horizontal) 6.5 μm (Vertical) Read Noise 1.4 e^-, 1 e^-, 0.7 e^- (RMS, Standard Scan, RMS, Ultra quiet Scan, RMS) Bit Depth 16 bit, 12 bit, 8 bit Lens Mount C-Mount Frame Rate 89.1 FPS, 31.6 FPS (11.22 ms, USB 3.0, 2304 × 2304 ROI, Fast Mode) 23.2 FPS (42.99 ms, USB 3.0, 2304 × 2304 ROI, Standard Scan) 5.4 FPS (184.4 ms, USB 3.0, 2304 × 2304 ROI, Ultra quiet Scan) Dark Current (Camera) 0.5 e-/pixel/s (-5 °C) 0.2 e-/pixel/s (-15 °C) Exposure Time 17 μs - 10 s 65 μs - 10 s Dynamic Range 86.61 dB (21400:1) Full Well Capacity 15000 e^- Operating Relative Humidity 30 - 80% Power Supply Approx. 150 VA Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	8 x 24 mm	192 mm²	160 - 320 nm 230 nm (Peak Sensitivity)	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 160 - 320 nm 230 nm (Peak Sensitivity) Sensing Area 8 x 24 mm Active Area 192 mm² Supply Voltage 1 kV Peak Response Wavelength 230 nm Detection Wavelength Region UV, DUV Sensor Type Photocathode Dark Current 1 nA (Typical, After 30 Min) 10 nA (Maximum, After 30 Min) Rise Time 2.2 ns (Typical) Photocathode Material Cs-Te Anode Current 100 μA (Maximum) Radiant Sensitivity 6.2 × 10⁵ A/W (254 nm, Anode, Typical) Anode to Cathode Voltage 1.25 kV Dynode Stages 9 Transit Time 22 ns (Typical) Window Material Silica glass Gain 1 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	Ø 120 mm	11309.7312 mm²	420 nm (Peak Sensitivity) 300 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 142 mm 127 mm (5", Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Applications High Energy Physics Sensing Area Ø 120 mm Active Area 11309.7312 mm² Supply Voltage -2 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Dark Current 300 nA (Maximum, After 30 Min) 50 nA (Typical, After 30 Min) Active Area Diameter 120 mm Rise Time 2.5 ns (Typical) Photocathode Material Bialkali Anode Current 1.02 mA (Maximum) Pulse Linearity 150 mA (Anode, 5% Deviation) 100 mA (Anode, 2% Deviation) Anode to Cathode Voltage -3 kV Transit Time Spread 1.2 ns (Typical) Blue Sensitivity Index 9 (Typical, Cathode) Dynode Stages 14 Transit Time 54 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 70 μA/lm (Typical, Cathode), 1000 A/lm (Typical, Anode) Gain 1.4 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	3 x 3 mm	9 mm²	320 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 320 - 900 nm Key Features Cooled Sensing Area 3 x 3 mm Active Area 9 mm² Peak Response Wavelength 500 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System Thermoelectric Resolution (Pixels) 3600 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	3.7 x 13 mm	48.1 mm²	340 nm (Peak Sensitivity) 185 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 19 x 53.2 x 50.8 mm Wavelength Range 340 nm (Peak Sensitivity) 185 - 650 nm Weight 110 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Sensing Area 3.7 x 13 mm Active Area 48.1 mm² Supply Voltage ±11.5 V, ±15.5 V ±18 V (Maximum) Peak Response Wavelength 340 nm Detection Wavelength Region UV, DUV, Visible Supply Current -1 to 9 mA (Maximum) Radiant Sensitivity 0.048 A/W (Cathode, Typical) Input Voltage ±11.5 V to ±15.5 V, ±18 V (Maximum) Settling Time 10 s (Maximum) Blue Sensitivity Index 5 (Typical, Cathode) Current to Voltage Coversion Factor 1 V/uA Control Voltage 250 mV - 1 V Luminous Sensitivity 40 μA/lm (Typical, Cathode), 5 × 10⁷ V/lm (Minimum, Anode), 20 μA/lm (Minimum, Cathode), 3 × 10⁸ V/lm (Typical, Anode) Output Voltage 10 V (10 kΩ, Maximum) Input Current -1 to 9 mA (Maximum) Ripple Noise 800 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Balanced Detector	-	-	900 - 1700 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 24 x 54.5 x 65 mm Wavelength Range 900 - 1700 nm Applications LIDAR Peak Response Wavelength 1550 nm Detection Wavelength Region Short-Wave IR Near IR Sensor Type InGaAs Detector Bandwidth 200 MHz Common-Mode Rejection Ratio 30 dB (Typical) Supplier Location Japan See product details More from HAMAMATSU
Radiation Sensor	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Supply Voltage 5 V Sensor Type Scintillator Exposure Time 10 - 60 s Photon Energy Range 60 keV - 2 MeV Scintillator Csl (Tl), 80 x 80 x 25 mm Window Material MPPC Energy Resolution 662 keV (9%) Power Supply +5 V Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	Ø 70 mm	3848.4502 mm²	420 nm (Peak Sensitivity) 300 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 76 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Sensing Area Ø 70 mm Active Area 3848.4502 mm² Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Dark Current 20 nA (Maximum, After 30 Min) 2 nA (Typical, After 30 Min) Active Area Diameter 70 mm Rise Time 8 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 26000 A/W (Anode, Typical) 0.095 A/W (Cathode, Typical) Anode to Cathode Voltage 1.5 kV Blue Sensitivity Index 12 (Typical, Cathode) Dynode Stages 8 Transit Time 64 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 110 μA/lm (Typical, Cathode), 3 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 30 A/lm (Typical, Anode) Gain 2.7 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
CMOS Image Sensor	1.5 x 1.5 mm	2.25 mm²	400 - 1100 nm	Contact Supplier	Add to cart to request quote
Product Code Interface SPI Wavelength Range 400 - 1100 nm Key Features Low Power Consumption Sensing Area 1.5 x 1.5 mm Active Area 2.25 mm² Detection Wavelength Region Visible, Near IR Sensor Type CMOS Package Ceramic Cooling System None Resolution (Pixels) 30 x 30 Pixel Size 50 x 50 μm Frame Rate 344 FPS Window Material Broslicate glass Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	Ø 22 mm	380.1 mm²	420 nm (Peak Sensitivity) 300 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28.7 mm 25 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Sensing Area Ø 22 mm Active Area 380.1 mm² Supply Voltage -1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Dark Current 20 nA (Maximum, After 30 Min) 3 nA (Typical, After 30 Min) Active Area Diameter 22 mm Rise Time 1.5 ns (Typical) Photocathode Material Bialkali Anode Current 290 μA (Maximum) Pulse Linearity 50 mA (Anode, 5% Deviation) 30 mA (Anode, 2% Deviation) Radiant Sensitivity 1.7 × 10⁵ A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage -1.25 kV Blue Sensitivity Index 10.5 (Typical, Cathode) Dynode Stages 10 Transit Time 17 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 90 μA/lm (Typical, Cathode), 40 A/lm (Minimum, Anode), 60 μA/lm (Minimum, Cathode), 180 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multianode Voltage Output PMT Module	800 μm x 5 mm (x 16 channels, Channel pitch 1 mm)	4 mm²	660 nm (Peak Sensitivity) 300 - 840 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 72 x 62 x 114 mm Wavelength Range 660 nm (Peak Sensitivity) 300 - 840 nm Weight 434 g Operating Temperature 5 - 35 °C Sensing Area 800 μm x 5 mm (x 16 channels, Channel pitch 1 mm) Active Area 4 mm² Supply Voltage 12 V (Maximum) 12 V (10.5 - 13.5) ±4.5 V, ±5.5 V (±5) ±6 V (±5, Maximum) Peak Response Wavelength 660 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type GaAsP Photocathode Radiant Sensitivity 0.133 A/W (Cathode, Typical) Input Voltage +10.5 to +13.5, ±4.5 to ±5.5 V (AMP), +15 (Maximum), ±6 V (Maximum, AMP) Settling Time 2 s (Maximum) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 500 mV - 1.1 V Luminous Sensitivity 1100 μA/lm (Typical, Cathode), 4.5 × 10⁷ V/lm (Minimum, Anode), 900 μA/lm (Minimum, Cathode), 1.1 × 10⁸ V/lm (Typical, Anode) Output Voltage 3.5 V (Maximum, Pulsed) Input Current ±110 mA (±5, Maximum) Ripple Noise 1 mV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	4 x 13 mm	52 mm²	340 nm (Peak Sensitivity) 185 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 13 mm (Tube Size) Wavelength Range 340 nm (Peak Sensitivity) 185 - 650 nm Sensing Area 4 x 13 mm Active Area 52 mm² Supply Voltage 1 kV Peak Response Wavelength 340 nm Detection Wavelength Region UV, DUV, Visible Sensor Type Bialkali Photocathode Dark Current 5 nA (Maximum, After 30 Min) 500 pA (Typical, After 30 Min) Rise Time 1.4 ns (Typical) Photocathode Material Bialkali Anode Current 10 μA (Maximum) Radiant Sensitivity 3.6 × 10⁵ A/W (Anode, Typical) 0.048 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 5 (Typical, Cathode) Dynode Stages 9 Transit Time 15 ns (Typical) Window Material UV glass Luminous Sensitivity 40 μA/lm (Typical, Cathode), 50 A/lm (Minimum, Anode), 20 μA/lm (Minimum, Cathode), 300 A/lm (Typical, Anode) Gain 7.5 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Photodetector Array	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface Digital Supplier Location Japan See product details More from HAMAMATSU
sCMOS Camera	10.89 mm	-	400 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Interface CXP-6, USB 3.1 Wavelength Range 400 - 900 nm Key Features Can be Triggered Operating Temperature 0 - 40 °C Power Consumption 100 W Sensing Area 10.89 mm Supply Voltage 100 V 240 V (2.5 A, 50/60 Hz) Detection Wavelength Region Visible, Near IR Sensor Type CMOS Cooling System Air, Thermoelectric Resolution (Pixels) 4432 x 2368 Pixel Size 4.6 x 4.6 μm Quantum Efficiency 86% (Peak, Typical) Read Noise 1 e^- (RMS) 0.9 e^- (Median) Bit Depth 16 bit, 8 bit Lens Mount C-Mount Frame Rate 115 FPS (Full Frame) 15.7 FPS (Full Frame) 19500 FPS 3690 FPS Dark Current (Camera) 0.6 e-/pixel/s Exposure Time 7.309 μs - 10 s Trigger Mode Edge trigger External Global reset edge trigger Global reset level trigger TTL Dynamic Range 86.02 dB (20000:1, RMS) 86.85 dB (22000:1, Median) Full Well Capacity 20000 e^- Shutter Type Global Operating Relative Humidity 30 - 80% Power Supply AC 100 V to AC 240 V, 50 Hz/60 Hz, 2.5 A Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	800 μm x 7 mm (x 32 channels)	5.6 mm²	400 nm (Peak Sensitivity) 300 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 52 x 24 mm Wavelength Range 400 nm (Peak Sensitivity) 300 - 650 nm Sensing Area 800 μm x 7 mm (x 32 channels) Active Area 5.6 mm² Supply Voltage -800 V Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible Dark Current 2 nA (Maximum, After 30 Min) 200 pA (Typical, After 30 Min) Rise Time 600 ps (Typical) Photocathode Material Ultra bialkali Anode Current 370 μA (Maximum) Pulse Linearity 600 μA (Anode, 2% Deviation) Radiant Sensitivity 0.13 A/W (Cathode, Typical) Anode to Cathode Voltage -900 V Transit Time Spread 180 ps (Typical) Blue Sensitivity Index 15.5 (Typical, Cathode) Dynode Stages 10 Transit Time 6.8 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 135 μA/lm (Typical, Cathode), 110 A/lm (Minimum, Anode), 110 μA/lm (Minimum, Cathode), 270 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
InSb Photovoltaic Sensor	Ø 1 mm	0.7854 mm² (1 mm)	5500 nm (Peak Sensitivity)	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 5500 nm (Peak Sensitivity) Sensing Area Ø 1 mm Active Area 0.7854 mm² (1 mm) Peak Response Wavelength 5500 nm Detection Wavelength Region Mid IR Sensor Type InSb Package Metal Cooling System Liquid Nitrogen Active Area Diameter 1 mm Rise Time 70 ns (Typical) Number of Elements 1 Supplier Location Japan See product details More from HAMAMATSU
Photon Counting PMT Module	Ø 8 mm	50.27 mm²	400 nm (Peak Sensitivity) 230 - 870 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 30 x 22 x 54 mm Wavelength Range 400 nm (Peak Sensitivity) 230 - 870 nm Applications Single Photon Counting Weight 61 g Operating Temperature 5 - 40 °C Sensing Area Ø 8 mm Active Area 50.27 mm² Supply Voltage 4.75 - 5.25 V 6 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible, Near IR Active Area Diameter 8 mm Supply Current 40 mA (Maximum) Dark Count Rate 1 kHz (Maximum) 600 Hz (Typical) Output Pulse Width 10 ns Input Voltage +4.75 V to +5.25 V, 6 V (Maximum) Input Current 40 mA (Maximum) Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	18 x 18 mm	324 mm²	420 nm (Peak Sensitivity) 185 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 30 x 30 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 185 - 650 nm Sensing Area 18 x 18 mm Active Area 324 mm² Supply Voltage 800 V Peak Response Wavelength 420 nm Detection Wavelength Region UV, DUV, Visible Sensor Type Bialkali Photocathode Dark Current 20 nA (Maximum, After 30 Min) 2 nA (Typical, After 30 Min) Rise Time 1.6 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Pulse Linearity 60 mA (Anode, 5% Deviation) 30 mA (Anode, 2% Deviation) Radiant Sensitivity 1.4 × 10⁵ A/W (Anode, Typical) 0.08 A/W (Cathode, Typical) Anode to Cathode Voltage 900 V Transit Time Spread 350 ps (Typical) Blue Sensitivity Index 9.5 (Typical, Cathode) Dynode Stages 10 Transit Time 9.6 ns (Typical) Window Material UV glass Luminous Sensitivity 80 μA/lm (Typical, Cathode), 40 A/lm (Minimum, Anode), 60 μA/lm (Minimum, Cathode), 160 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	1.3 x 1.3 mm	1.69 mm²	320 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 320 - 900 nm Key Features Cooled Sensing Area 1.3 x 1.3 mm Active Area 1.69 mm² Peak Response Wavelength 500 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System Thermoelectric Resolution (Pixels) 667 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	220.2 x 6.1 mm	1343.0 mm²	-	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications Imaging, X-Ray Power Consumption ~ 25 W Sensing Area 220.2 x 6.1 mm Active Area 1343.0 mm² Supply Voltage 15 V Resolution (Pixels) 4608 x 128 Line Rate 2.109 kHz (6.073 m/min) 1.858 kHz (10.702 m/min) Bit Depth 16 bit Scanning Method Time Delay Integration Tube Voltage Range ~ 25 - 90 kV Line Speed 0.178 m/min to 6.073 m/min Power Supply DC +15 V Scintillator FOS (Fiber optic plate with scintillator) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	Ø 5 mm	19.63495 mm²	380 - 900 nm 630 nm (Peak Sensitivity)	Contact Supplier	Add to cart to request quote
Product Code Dimensions 22 x 22 x 68 mm Wavelength Range 380 - 900 nm 630 nm (Peak Sensitivity) Weight ~ 100 g Operating Temperature 5 - 35 °C Sensing Area Ø 5 mm Active Area 19.63495 mm² Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type GaAs Photocathode GaAsP Active Area Diameter 5 mm Supply Current 62 mA (Maximum) Dark Count Rate 7.5 kHz (Typical) Radiant Sensitivity 1.9 × 10⁵ A/W (Anode, Typical) 0.095 A/W (Cathode, Typical) Input Voltage +11.5 V to +15.5 V, +18 V (Maximum) Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV (100 kΩ) Input Current 62 mA (Maximum) Ripple Noise 600 μV Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	Ø 8 mm	50.27 mm²	630 nm (Peak Sensitivity) 300 - 920 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 22 x 22 x 25 mm Wavelength Range 630 nm (Peak Sensitivity) 300 - 920 nm Weight 32 g Operating Temperature 5 - 50 °C Sensing Area Ø 8 mm Active Area 50.27 mm² Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Dark Current 100 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 600 ps (Typical) Supply Current 12 mA (Maximum) Radiant Sensitivity 80000 A/W (Anode, Typical) 0.078 A/W (Cathode, Typical) Input Voltage +11.5 V to +15.5 V, 18 V (Maximum) Settling Time 200 ms (Maximum) Control Voltage 500 mV - 1 V (30 kΩ) Luminous Sensitivity 500 μA/lm (Typical, Cathode), 140 A/lm (Minimum, Anode), 350 μA/lm (Minimum, Cathode), 500 A/lm (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Photodetector Array	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Dimensions 89 x 38 x 26 mm Sensor Type Silicon Supplier Location Japan See product details More from HAMAMATSU
SWIR Camera	6.4 x 5.12 mm	32.768 mm²	950 - 1700 nm	Contact Supplier	Add to cart to request quote
Product Code Interface USB 3.0 Wavelength Range 950 - 1700 nm Applications Alignment, Fluorescence, Optical Communication Key Features Can be Triggered Operating Temperature 0 - 40 °C Power Consumption ~ 16 W Sensing Area 6.4 x 5.12 mm Active Area 32.768 mm² Supply Voltage 12 V Detection Wavelength Region Short-Wave IR Near IR Sensor Type InGaAs Cooling System Air, Thermoelectric Resolution (Pixels) 320 x 256 Pixel Size 20 x 20 μm Bit Depth 14 bit Lens Mount C-Mount Frame Rate 216.6 FPS, 214.3 FPS Exposure Time 4.6 ms - 1 s 100 μs - 1 s Trigger Mode Edge trigger Operating Relative Humidity 30 - 80% Power Supply DC +12 V Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	23 x 23 mm	529 mm²	400 nm (Peak Sensitivity) 185 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 30 x 30 mm (Tube Size) Wavelength Range 400 nm (Peak Sensitivity) 185 - 650 nm Sensing Area 23 x 23 mm Active Area 529 mm² Supply Voltage 1 kV Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible Sensor Type Bialkali Photocathode Dark Current 4 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Rise Time 1.1 ns (Typical) Photocathode Material Ultra bialkali Anode Current 100 μA (Maximum) Pulse Linearity 7 mA (Anode, 5% Deviation) 4 mA (Anode, 2% Deviation) Radiant Sensitivity 1.3 × 10⁵ A/W (Anode, Typical) 0.13 A/W (Cathode, Typical) Anode to Cathode Voltage 1.1 kV Transit Time Spread 390 ps (Typical) Blue Sensitivity Index 15.5 (Typical, Cathode) Dynode Stages 12 Transit Time 5.3 ns (Typical) Window Material UV glass Luminous Sensitivity 135 μA/lm (Typical, Cathode), 25 A/lm (Minimum, Anode), 110 μA/lm (Minimum, Cathode), 135 A/lm (Typical, Anode) Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	3.7 x 13 mm	48.1 mm²	450 nm (Peak Sensitivity) 185 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 19 x 53.2 x 50.8 mm Wavelength Range 450 nm (Peak Sensitivity) 185 - 900 nm Weight 110 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Sensing Area 3.7 x 13 mm Active Area 48.1 mm² Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 450 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Photocathode Dark Current 10 nA (Maximum, After 30 Min) 2 nA (Typical, After 30 Min) Rise Time 1.4 ns (Typical) Supply Current 7 mA (Maximum) Radiant Sensitivity 4.2 × 10⁵ A/W (Anode, Typical) 0.105 A/W (Cathode, Typical) Input Voltage +11.5 V to +15.5 V, 18 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 250 mV - 1 V Luminous Sensitivity 500 μA/lm (Typical, Cathode), 1000 A/lm (Minimum, Anode), 350 μA/lm (Minimum, Cathode), 2000 A/lm (Typical, Anode) Input Current 7 mA (Maximum) Ripple Noise 500 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	Ø 5 mm	19.63495 mm²	520 nm (Peak Sensitivity) 300 - 740 nm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 520 nm (Peak Sensitivity) 300 - 740 nm Weight 76 g Operating Temperature 5 - 35 °C Sensing Area Ø 5 mm Active Area 19.63495 mm² Supply Voltage 11.5 - 15.5 V Peak Response Wavelength 520 nm Detection Wavelength Region UV, Visible Sensor Type GaAsP Photocathode Dark Current 3 nA (Typical) 10 nA (Maximum) Active Area Diameter 5 mm Rise Time 1 ns (Typical) Quantum Efficiency 40% (Cathode, Minimum) 45% (Cathode, Typical) Radiant Sensitivity 0.189 A/W (Cathode, Typical) 0.168 A/W (Cathode, Minimum) 1 × 10⁵ A/W (Anode, Minimum) 1.9 × 10⁵ A/W (Anode, Typical) Input Voltage +18 V (Maximum), +11.5 to +15.5 V Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Gain 1 × 10⁶ (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	10 x 24 mm	240 mm²	450 nm (Peak Sensitivity) 185 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 450 nm (Peak Sensitivity) 185 - 900 nm Sensing Area 10 x 24 mm Active Area 240 mm² Supply Voltage 1 kV Peak Response Wavelength 450 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Multialkali Photocathode Dark Current 100 nA (Maximum, After 30 Min) 20 nA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Photocathode Material Multialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 0.09 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Transit Time Spread 1.2 ns (Typical) Blue Sensitivity Index 15 (Typical, Cathode) Dynode Stages 9 Transit Time 22 ns (Typical) Window Material UV glass Luminous Sensitivity 525 μA/lm (Typical, Cathode), 3000 A/lm (Minimum, Anode), 475 μA/lm (Minimum, Cathode), 5000 A/lm (Typical, Anode) Gain 9.5 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	439.9 x 6.1 mm	2683.39 mm²	-	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications Imaging, X-Ray Power Consumption ~ 20 W, ~ 30 W Sensing Area 439.9 x 6.1 mm Active Area 2683.39 mm² Supply Voltage 15 V Resolution (Pixels) 9216 x 128 Line Rate 2.109 kHz (6.073 m/min) 1.858 kHz (10.702 m/min) Bit Depth 16 bit Scanning Method Time Delay Integration Tube Voltage Range ~ 25 - 90 kV Line Speed 0.178 m/min to 6.073 m/min Power Supply DC +15 V Scintillator FOS (Fiber optic plate with scintillator) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	Ø 81 mm	5153.0 mm²	420 nm (Peak Sensitivity) 300 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 90 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Applications High Energy Physics Sensing Area Ø 81 mm Active Area 5153.0 mm² Supply Voltage 1.25 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Dark Current 500 nA (Maximum, After 30 Min) 50 nA (Typical, After 30 Min) Active Area Diameter 81 mm Rise Time 2.9 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Pulse Linearity 30 mA (Anode, 5% Deviation) 20 mA (Anode, 2% Deviation) Anode to Cathode Voltage 1.5 kV Transit Time Spread 1.5 ns (Typical) Window Material Borosilicate glass Radiant Sensitivity 9 × 10⁵ A/W (Anode, Typical) 0.09 A/W (Cathode, Typical) Blue Sensitivity Index 11 (Typical, Cathode) Dynode Stages 10 Transit Time 36 ns (Typical) Luminous Sensitivity 90 μA/lm (Typical, Cathode), 60 μA/lm (Minimum, Cathode), 900 A/lm (Typical, Anode) Gain 1 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	1.3 x 1.3 mm	1.69 mm²	320 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 320 - 900 nm Sensing Area 1.3 x 1.3 mm Active Area 1.69 mm² Peak Response Wavelength 500 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System None Resolution (Pixels) 667 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	Ø 15 mm	176.71455 mm²	420 nm (Peak Sensitivity) 300 - 650 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 23.5 mm 19 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Sensing Area Ø 15 mm Active Area 176.71455 mm² Supply Voltage -1.7 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Dark Current 300 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Active Area Diameter 15 mm Rise Time 1.3 ns (Typical) Photocathode Material Bialkali Anode Current 350 μA (Maximum) Pulse Linearity 8 mA (Anode, 5% Deviation) 4 mA (Anode, 2% Deviation) Anode to Cathode Voltage -1.8 kV Transit Time Spread 360 ps (Typical) Blue Sensitivity Index 11 (Typical, Cathode) Dynode Stages 8 Transit Time 14 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 115 μA/lm (Typical, Cathode), 200 A/lm (Typical, Anode) Gain 1.7 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	8 x 24 mm	192 mm²	450 nm (Peak Sensitivity) 185 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 450 nm (Peak Sensitivity) 185 - 900 nm Sensing Area 8 x 24 mm Active Area 192 mm² Supply Voltage 1 kV Peak Response Wavelength 450 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Multialkali Photocathode Dark Current 50 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Photocathode Material Multialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 8.5 × 10⁵ A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Transit Time Spread 1.2 ns (Typical) Blue Sensitivity Index 12.5 (Typical, Cathode) Dynode Stages 9 Transit Time 22 ns (Typical) Window Material UV Luminous Sensitivity 450 μA/lm (Typical, Cathode), 1000 A/lm (Minimum, Anode), 375 μA/lm (Minimum, Cathode), 4500 A/lm (Typical, Anode) Gain 1 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Amplified Photodiode	2.4 x 2.4 mm	5.76 mm²	190 - 1100 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 190 - 1100 nm Sensing Area 2.4 x 2.4 mm Active Area 5.76 mm² Supply Voltage ±5 V, ±12 V Peak Response Wavelength 960 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Silicon Detector Bandwidth 10 Hz - 1 kHz Transimpedance Gain 1 × 10⁷ (Low Range), 1 × 10⁹ V/A (High Range) Supplier Location Japan See product details More from HAMAMATSU
Multianode Voltage Output PMT Module	800 μm x 7 mm	5.6 mm²	300 - 650 nm 400 nm (Peak Sensitivity)	Contact Supplier	Add to cart to request quote
Product Code Dimensions 60 x 40.5 x 84 mm Wavelength Range 300 - 650 nm 400 nm (Peak Sensitivity) Weight 246 g Operating Temperature 5 - 45 °C Sensing Area 800 μm x 7 mm Active Area 5.6 mm² Supply Voltage ±11.5 V, ±15.5 V ±16 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible Preamplifier Yes Radiant Sensitivity 0.11 A/W (Cathode, Typical) Input Voltage ±11.5 to ±15.5 V, ±16 V (Maximum) Blue Sensitivity Index 13.5 (Typical, Cathode) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 2 - 3.2 V Luminous Sensitivity 105 μA/lm (Typical, Cathode), 9 × 10⁶ V/lm (Minimum, Anode), 90 μA/lm (Minimum, Cathode), 2.1 × 10⁷ V/lm (Typical, Anode) Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	221.1 x 7.2 mm	1591.92 mm²	-	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications X-Ray Operating Temperature 0 - 40 °C Power Consumption ~ 45 W Sensing Area 221.1 x 7.2 mm Active Area 1591.92 mm² Supply Voltage 15 V Resolution (Pixels) 4608 x 150 Pixel Size 48 x 48 μm Line Rate 20 kHz (57.6 m/min) 15 kHz (86.4 m/min) Bit Depth 12 bit Scanning Method Time Delay Integration Digital Binning Max. 15 kHz (86.4 m/min) Tube Voltage Range ~ 10 - 110 kV Line Speed 0.576 m/min to 57.6 m/min Power Supply DC +15 V Scintillator CsI Scintillator Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	Ø 8 mm	50.27 mm²	400 nm (Peak Sensitivity) 230 - 870 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 20 x 50 x 60 mm Wavelength Range 400 nm (Peak Sensitivity) 230 - 870 nm Applications Single Photon Counting Weight 125 g Key Features Low Dark Counts Operating Temperature 5 - 50 °C Sensing Area Ø 8 mm Active Area 50.27 mm² Supply Voltage 14.5 - 15.5 V 16 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type Multialkali Photocathode Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 10 mA (Maximum) Dark Count Rate 600 Hz (Typical) 1 kHz (Maximum) Control Voltage 500 mV - 1.1 V Ripple Noise 800 μV Storage Temperature -20 to 50 °C Radiant Sensitivity 1.5 × 10⁵ A/W (Anode, Typical) 0.077 A/W (Cathode, Typical) Input Voltage +14.5 V to +15.5 V, 16 V (Maximum) Settling Time 200 ms (Maximum) Luminous Sensitivity 200 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 100 μA/lm (Minimum, Cathode), 400 A/lm (Typical, Anode) Input Current 10 mA (Maximum) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	Ø 8 mm	50.27 mm²	400 nm (Peak Sensitivity) 185 - 870 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 50 x 22 x 22 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 870 nm Applications Single Photon Counting Weight 76.5 g Key Features Low Dark Counts Wide Sectral Bandwidth Response Operating Temperature 5 - 50 °C Sensing Area Ø 8 mm Active Area 50.27 mm² Supply Voltage 2.8 - 5.5 V 5.5 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible, Near IR Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 2.7 mA (Maximum) Dark Count Rate 600 Hz (Typical) 1 kHz (Maximum) Radiant Sensitivity 1.5 × 10⁵ A/W (Anode, Typical) 0.077 A/W (Cathode, Typical) Input Voltage +2.8 V to +5.5 V, 5.5 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 500 mV - 1.1 V (1 MΩ) Luminous Sensitivity 200 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 100 μA/lm (Minimum, Cathode), 400 A/lm (Typical, Anode) Input Current 2.7 mA (Maximum) Ripple Noise 100 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	Ø 8 mm	50.27 mm²	400 nm (Peak Sensitivity) 300 - 700 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 21.5 x 102 mm Wavelength Range 400 nm (Peak Sensitivity) 300 - 700 nm Applications Single Photon Counting Weight 37 g Key Features Low Dark Counts Low Power Consumption Operating Temperature 5 - 50 °C Sensing Area Ø 8 mm Active Area 50.27 mm² Supply Voltage 2.8 - 5.5 V 5.5 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 2.7 mA (Maximum) Control Voltage 500 mV - 1.1 V (1 MΩ) Ripple Noise 500 μV Storage Temperature -20 to 50 °C Radiant Sensitivity 2.2 × 10⁵ A/W (Anode, Typical) 0.11 A/W (Cathode, Typical) Input Voltage +2.8 V to +5.5 V, 5.5 V (Maximum) Settling Time 10 s (Maximum) Blue Sensitivity Index 13.5 (Typical, Cathode) Luminous Sensitivity 105 μA/lm (Typical, Cathode), 80 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 210 A/lm (Typical, Anode) Input Current 2.7 mA (Maximum) Supplier Location Japan See product details More from HAMAMATSU
Amplified Photodiode	2.4 x 2.4 mm	5.76 mm²	190 - 1100 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 190 - 1100 nm Sensing Area 2.4 x 2.4 mm Active Area 5.76 mm² Supply Voltage ±5 V, ±12 V Peak Response Wavelength 960 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Silicon Detector Bandwidth 1 - 100 kHz Transimpedance Gain 1 × 10⁴ (Low Range), 1 × 10⁶ V/A (High Range) Supplier Location Japan See product details More from HAMAMATSU
Unmounted Silicon APD	Ø 200 μm	π × 0.1² mm² (31420.0 μm²)	400 - 1000 nm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 400 - 1000 nm Sensing Area Ø 200 μm Active Area π × 0.1² mm² (31420.0 μm²) Peak Response Wavelength 800 nm (Typical) Detection Wavelength Region Visible, Near IR Sensor Type APD, Silicon Dark Current 500 pA (Maximum) Package Metal, TO-18 Active Area Diameter 0.2 mm Capacitance 1.5 pF (Typical) Detector Bandwidth 1 GHz (Typical) Photosensitivity 0.5 A/W (Typical) Breakdown Voltage 200 V (0.4 V/°C) Gain 100 (Typical) Supplier Location Japan See product details More from HAMAMATSU
sCMOS Camera	13.31 x 13.31 mm	177.1561 mm²	300 - 900 nm	Contact Supplier	Add to cart to request quote
Product Code Interface USB 3.0 Wavelength Range 300 - 900 nm Applications Fluorescence Live-Cell Imaging Super-Resolution Microscopy X-Ray Key Features Board Level Can be Triggered Operating Temperature 0 - 40 °C Power Consumption ~ 15 W Sensing Area 13.31 x 13.31 mm Active Area 177.1561 mm² Supply Voltage 12 V Detection Wavelength Region UV, Visible, Near IR Sensor Type sCMOS Resolution (Pixels) 2048 x 2048 Pixel Size 6.5 μm (Horizontal) 6.5 μm (Vertical) Read Noise 2.1 e^- (RMS, Typical) 1.5 e^- (Median, Typical) Bit Depth 16 bit Lens Mount C-Mount Frame Rate 30 FPS (Full Frame) 25655 FPS (512 × 8 ROI) Exposure Time 1 ms - 30 s Trigger Mode Edge trigger Global reset edge trigger Global reset level trigger Synchronous readout trigger Dynamic Range 86.02 dB (20000:1, Typical) Full Well Capacity 30000 e^- Operating Relative Humidity 30 - 80% Power Supply DC+12 V Storage Temperature -10 to 50 °C Digital Binning 2×2, 4×4 Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	4 x 20 mm	80 mm²	430 nm (Peak Sensitivity) 185 - 850 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 38 x 95 x 50 mm Wavelength Range 430 nm (Peak Sensitivity) 185 - 850 nm Applications Single Photon Counting Weight 225 g Key Features Low Dark Counts Operating Temperature 5 - 50 °C Sensing Area 4 x 20 mm Active Area 80 mm² Supply Voltage 4.5 - 5.5 V 6 V (Maximum) Peak Response Wavelength 430 nm Detection Wavelength Region UV, DUV, Visible, Near IR Dark Current 1 nA (Maximum, After 30 Min) 200 pA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Supply Current 3.5 mA (Maximum) Dark Count Rate 80 Hz (Typical) 200 Hz (Maximum) Radiant Sensitivity 2.8 × 10⁵ A/W (Anode, Typical) 0.08 A/W (Cathode, Typical) Input Voltage +4.5 V to +5.5 V, 6 V (Maximum) Settling Time 14 s (Maximum) Control Voltage 500 mV - 1.1 V Luminous Sensitivity 200 μA/lm (Typical, Cathode), 300 A/lm (Minimum, Anode), 140 μA/lm (Minimum, Cathode), 700 A/lm (Typical, Anode) Input Current 3.5 mA (Maximum) Ripple Noise 300 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
SWIR Camera	-	0.16 mm²	-	Contact Supplier	Add to cart to request quote
Product Code Interface GigE Applications Fluorescence SWIR Wafer Inspection Key Features Can be Triggered Operating Temperature 0 - 40 °C Power Consumption 6 W (Maximum) Active Area 0.16 mm² Supply Voltage 12 V Sensor Type InGaAs Resolution (Pixels) 1024 x 1 Pixel Size 12.5 μm (Horizontal) 12.5 μm (Vertical) Bit Depth 14 bit Lens Mount C-Mount Frame Rate 40000 FPS (21 μs, Internal Mode) 20000 FPS (21 μs, Edge Trigger) 40000 FPS (Sync Readout) Exposure Time 21 μs - 1 s Trigger Mode Edge trigger Operating Relative Humidity 30 - 80% Power Supply DC 12 V Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Amplified Photodiode	5.8 x 5.8 mm	33.64 mm²	190 - 1100 nm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 190 - 1100 nm Sensing Area 5.8 x 5.8 mm Active Area 33.64 mm² Supply Voltage ±5 V, ±12 V Peak Response Wavelength 960 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Silicon Detector Bandwidth 10 Hz - 1 kHz Transimpedance Gain 1 × 10⁷ (Low Range), 1 × 10⁹ V/A (High Range) Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	3.7 x 13 mm	48.1 mm²	185 - 320 nm 230 nm (Peak Sensitivity)	Contact Supplier	Add to cart to request quote
Product Code Dimensions 19 x 57.7 x 50.8 mm Wavelength Range 185 - 320 nm 230 nm (Peak Sensitivity) Weight 115 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Sensing Area 3.7 x 13 mm Active Area 48.1 mm² Supply Voltage ±11.5 V, ±15.5 V ±18 V (Maximum) Peak Response Wavelength 230 nm Detection Wavelength Region UV, DUV Supply Current -8 to 15 mA (Maximum) Radiant Sensitivity 0.05 A/W (Cathode, Typical) Input Voltage ±11.5 V to ±15.5 V, ±18 V (Maximum) Settling Time 10 s (Maximum) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 250 mV - 1 V Output Voltage 1 V (10 kΩ, Maximum) Input Current -8 to 15 mA (Maximum) Ripple Noise 800 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	3.7 x 13 mm	48.1 mm²	530 nm (Peak Sensitivity) 185 - 830 nm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 19 x 53.2 x 50.8 mm Wavelength Range 530 nm (Peak Sensitivity) 185 - 830 nm Weight 110 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Sensing Area 3.7 x 13 mm Active Area 48.1 mm² Supply Voltage ±11.5 V, ±15.5 V ±18 V (Maximum) Peak Response Wavelength 530 nm Detection Wavelength Region UV, DUV, Visible, Near IR Supply Current -8 to 15 mA (Maximum) Radiant Sensitivity 0.07 A/W (Cathode, Typical) Input Voltage ±11.5 V to ±15.5 V, ±18 V (Maximum) Settling Time 10 s (Maximum) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 250 mV - 1 V Luminous Sensitivity 200 μA/lm (Typical, Cathode), 3 × 10⁷ V/lm (Minimum, Anode), 140 μA/lm (Minimum, Cathode), 7 × 10⁷ V/lm (Typical, Anode) Output Voltage 1 V (10 kΩ, Maximum) Input Current -8 to 15 mA (Maximum) Ripple Noise 800 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU