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Detection Devices

Detection devices are an essential subset of the entire line of photonics products that encompass devices that are used for detecting the characteristics of light in the UV, VIS, NIR, and IR spectral ranges.

Product	Wavelength Range	Active Area	Sensing Area	Availability	Price (USD)
Image Intensifier	185 - 900 nm	490.9 mm²	Ø 25 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 185 - 900 nm Operating Temperature 0 - 40 °C Active Area 490.9 mm² Sensing Area Ø 25 mm Supply Voltage 100 - 240 V Detection Wavelength Region UV, DUV, Visible, Near IR Active Area Diameter 25 mm Photocathode Material Multialkali Quantum Efficiency 14% (Cathode) Resolution (lp/mm) 57 lp/mm Lens Mount C-Mount Magnification 1 Equivalent Background Input 1 × 10^-11 lm/cm² Luminous Gain 4 × 10⁶ (lm/m²)/lx Radiant Sensitivity 0.047 A/W (Cathode) Luminous Sensitivity 150 μA/lm (Cathode) Stage of Microchannel Plates 2 Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	400 nm (Peak Sensitivity) 185 - 1010 nm	72 mm²	6 x 12 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 400 nm (Peak Sensitivity) 185 - 1010 nm Applications Spectroscopy Active Area 72 mm² Sensing Area 6 x 12 mm Supply Voltage 1.25 kV Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type GaAs Photocathode InGaAs Photocathode Dark Current 40 nA (Maximum, After 30 Min) 4 nA (Typical, After 30 Min) Rise Time 3.3 ns (Typical) Photocathode Material InGaAs Anode Current 1 μA (Maximum) Radiant Sensitivity 300 A/W (1000 nm, Anode, Typical) Anode to Cathode Voltage 1.5 kV Dynode Stages 9 Transit Time 21 ns (Typical) Window Material UV glass Luminous Sensitivity 100 μA/lm (Typical, Cathode), 10 A/lm (Minimum, Anode), 50 μA/lm (Minimum, Cathode), 30 A/lm (Typical, Anode) Gain 3 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 185 - 850 nm	78.5398 mm²	Ø 10 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 13 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 185 - 850 nm Active Area 78.5398 mm² Sensing Area Ø 10 mm Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Multialkali Photocathode Dark Current 20 nA (Maximum, After 30 Min) 4 nA (Typical, After 30 Min) Active Area Diameter 10 mm Rise Time 2.5 ns (Typical) Photocathode Material Multialkali Anode Current 30 μA (Maximum) Radiant Sensitivity 51000 A/W (Anode, Typical) 0.051 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Dynode Stages 10 Transit Time 24 ns (Typical) Window Material UV glass Luminous Sensitivity 120 μA/lm (Typical, Cathode), 30 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 120 A/lm (Typical, Anode) Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	176.71455 mm²	Ø 15 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 19 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 176.71455 mm² Sensing Area Ø 15 mm Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Dark Current 20 nA (Maximum, After 30 Min) 3 nA (Typical, After 30 Min) Active Area Diameter 15 mm Rise Time 1.3 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 47000 A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 10.5 (Typical, Cathode) Dynode Stages 10 Transit Time 12 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 90 μA/lm (Typical, Cathode), 10 A/lm (Minimum, Anode), 60 μA/lm (Minimum, Cathode), 50 A/lm (Typical, Anode) Gain 5.5 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications X-Ray Operating Temperature 10 - 40 °C Supply Voltage 12 V, 4 V (±10%, 12 - 24%, 2.76 W) Sensor Type CMOS Resolution (Pixels) 1936 x 1216 2048 x 2048 Pixel Size 5.86 x 5.86 μm Read Noise 2.3 e^- Frame Rate 30 FPS 165.5 FPS (Maximum) Dynamic Range 85.11 dB (18000:1) Digital Binning 1×2, 2×2, 2×1 Power Supply PoCL (Power over Camera Link) or 4-pin connector Field of View 20 x 12.5 mm Storage Temperature 0 - 40 °C Supplier Location Japan See product details More from HAMAMATSU
Avalanche Photodiode Detector	200 - 1000 nm	0.7854 mm² (1 mm)	Ø 1 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 200 - 1000 nm Active Area 0.7854 mm² (1 mm) Sensing Area Ø 1 mm Supply Voltage 5 V (Typical) Peak Response Wavelength 620 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type APD Cooling System None Active Area Diameter 1 mm Detector Bandwidth 4 kHz - 100 MHz Conversion Gain -25000 V/W (Typical) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	630 nm (Peak Sensitivity) 380 - 900 nm	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 630 nm (Peak Sensitivity) 380 - 900 nm Weight 100 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Supply Voltage 11.5 - 15.5 V Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type GaAs Photocathode Dark Current 4 nA (Typical) 12 nA (Maximum) Active Area Diameter 5 mm Rise Time 1 ns (Typical) Quantum Efficiency 14% (Cathode, Minimum) 19% (Cathode, Typical) Radiant Sensitivity 0.095 A/W (Cathode, Typical) 0.07 A/W (Cathode, Minimum) 42000 A/W (Anode, Minimum) 95000 A/W (Anode, Typical) Input Voltage +18 V (Maximum), +11.5 to +15.5 V Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Gain 1 × 10⁶ (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	3848.4502 mm²	Ø 70 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 76 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 3848.4502 mm² Sensing Area Ø 70 mm Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Dark Current 20 nA (Maximum, After 30 Min) 2 nA (Typical, After 30 Min) Active Area Diameter 70 mm Rise Time 9.5 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 26000 A/W (Anode, Typical) 0.095 A/W (Cathode, Typical) Anode to Cathode Voltage 1.5 kV Blue Sensitivity Index 12 (Typical, Cathode) Dynode Stages 8 Transit Time 52 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 110 μA/lm (Typical, Cathode), 3 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 30 A/lm (Typical, Anode) Gain 2.7 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 160 - 650 nm	490.9 mm²	Ø 25 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 160 - 650 nm Active Area 490.9 mm² Sensing Area Ø 25 mm Supply Voltage 1.5 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, DUV, Visible Sensor Type Bialkali Photocathode Dark Current 200 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Active Area Diameter 25 mm Rise Time 1.7 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Pulse Linearity 10 mA (Anode, 2% Deviation) Radiant Sensitivity 4.4 × 10⁵ A/W (Anode, Typical) 0.088 A/W (Cathode, Typical) Anode to Cathode Voltage 2 kV Transit Time Spread 500 ps (Typical) Blue Sensitivity Index 11 (Typical, Cathode) Dynode Stages 10 Transit Time 16 ns (Typical) Window Material Quartz Luminous Sensitivity 100 μA/lm (Typical, Cathode), 70 μA/lm (Minimum, Cathode), 500 A/lm (Typical, Anode) Gain 5 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	350 - 1000 nm	7.069 mm² (3 mm)	Ø 3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Digital Wavelength Range 350 - 1000 nm Key Features Cooled, Low Dark Counts Active Area 7.069 mm² (3 mm) Sensing Area Ø 3 mm Peak Response Wavelength 600 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System Thermoelectric Active Area Diameter 3 mm Resolution (Pixels) 2836 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	630 nm (Peak Sensitivity) 380 - 900 nm	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 630 nm (Peak Sensitivity) 380 - 900 nm Weight 76 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Supply Voltage 11.5 - 15.5 V Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type GaAs Photocathode Dark Current 4 nA (Typical) 12 nA (Maximum) Active Area Diameter 5 mm Rise Time 1 ns (Typical) Quantum Efficiency 14% (Cathode, Minimum) 19% (Cathode, Typical) Radiant Sensitivity 0.095 A/W (Cathode, Typical) 0.07 A/W (Cathode, Minimum) 42000 A/W (Anode, Minimum) 95000 A/W (Anode, Typical) Input Voltage +18 V (Maximum), +11.5 to +15.5 V Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Gain 1 × 10⁶ (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	400 nm (Peak Sensitivity) 185 - 900 nm	48.1 mm²	3.7 x 13 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 19 x 53.2 x 50.8 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 900 nm Weight 110 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Active Area 48.1 mm² Sensing Area 3.7 x 13 mm Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Photocathode Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Rise Time 1.4 ns (Typical) Supply Current 7 mA (Maximum) Radiant Sensitivity 3.1 × 10⁵ A/W (Anode, Typical) 0.077 A/W (Cathode, Typical) Input Voltage +11.5 V to +15.5 V, 18 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 250 mV - 1 V Luminous Sensitivity 300 μA/lm (Typical, Cathode), 400 A/lm (Minimum, Anode), 200 μA/lm (Minimum, Cathode), 1200 A/lm (Typical, Anode) Input Current 7 mA (Maximum) Ripple Noise 500 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 650 nm	380.1 mm²	Ø 22 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 25 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 380.1 mm² Sensing Area Ø 22 mm Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Active Area Diameter 22 mm Rise Time 1.5 ns (Typical) Photocathode Material Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 1.7 × 10⁵ A/W (Anode, Typical) 0.085 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 10.5 (Typical, Cathode) Dynode Stages 10 Transit Time 17 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 90 μA/lm (Typical, Cathode), 90 A/lm (Minimum, Anode), 60 μA/lm (Minimum, Cathode), 180 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	889.99 mm²	145.9 x 6.1 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications Imaging, X-Ray Power Consumption ~ 30 W Active Area 889.99 mm² Sensing Area 145.9 x 6.1 mm Supply Voltage 15 V Resolution (Pixels) 3040 x 128 Line Rate 2.109 kHz (6.073 m/min) 1.858 kHz (10.702 m/min) Bit Depth 12 bit Scanning Method Time Delay Integration Tube Voltage Range ~ 25 - 90 kV Line Speed 0.178 m/min to 6.073 m/min Power Supply DC +15 V Scintillator FOS (Fiber optic plate with scintillator) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 850 nm	12.57 mm²	Ø 4 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 19 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 850 nm Active Area 12.57 mm² Sensing Area Ø 4 mm Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type Multialkali Photocathode Active Area Diameter 4 mm Rise Time 1.7 ns (Typical) Photocathode Material Multialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 61000 A/W (Anode, Typical) 0.051 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Dynode Stages 10 Transit Time 24 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 120 μA/lm (Typical, Cathode), 30 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 150 A/lm (Typical, Anode) Gain 1.2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	300 - 1700 nm 1500 nm (Peak Sensitivity)	24 mm²	3 x 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 51 mm (Tube Size) Wavelength Range 300 - 1700 nm 1500 nm (Peak Sensitivity) Active Area 24 mm² Sensing Area 3 x 8 mm Supply Voltage 1.5 kV Peak Response Wavelength 1500 nm Detection Wavelength Region UV, Short-Wave IR, Visible, Near IR Sensor Type GaAs Photocathode InGaAs Photocathode InP Dark Current 40 nA (Typical, After 30 Min) 100 nA (Maximum, After 30 Min) Rise Time 3 ns (Typical) Photocathode Material InGaAs Anode Current 2 μA (Maximum) Radiant Sensitivity 700 A/W (Anode, Typical) 0.0035 A/W (Cathode, Typical) Anode to Cathode Voltage 1.75 kV Transit Time Spread 1.5 ns (Typical) Dynode Stages 10 Transit Time 23 ns (Typical) Window Material Borosilicate glass Gain 1 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Avalanche Photodiode Detector	400 - 1000 nm	7.069 mm² (3 mm)	Ø 3 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 400 - 1000 nm Active Area 7.069 mm² (3 mm) Sensing Area Ø 3 mm Supply Voltage 5 V (Typical) Peak Response Wavelength 800 nm Detection Wavelength Region Visible, Near IR Sensor Type APD Cooling System None Active Area Diameter 3 mm Detector Bandwidth 4 kHz - 80 MHz Conversion Gain -23000 V/W (Typical) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	300 - 740 nm 520 nm (Peak Sensitivity)	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 22 x 22 x 68 mm Wavelength Range 300 - 740 nm 520 nm (Peak Sensitivity) Weight ~ 100 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 520 nm Detection Wavelength Region UV, Visible Sensor Type GaAs Photocathode GaAsP Photocathode Dark Current 3 nA (Typical, After 30 Min) Active Area Diameter 5 mm Supply Current 62 mA (Maximum) Radiant Sensitivity 1.9 × 10⁵ A/W (Anode, Typical) 0.189 A/W (Cathode, Typical) Input Voltage +11.5 V to +15.5 V, +18 V (Maximum) Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV (100 kΩ) Input Current 62 mA (Maximum) Ripple Noise 600 μV Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	320 - 900 nm	1.69 mm²	1.3 x 1.3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 320 - 900 nm Key Features Cooled Active Area 1.69 mm² Sensing Area 1.3 x 1.3 mm Peak Response Wavelength 450 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System Thermoelectric Resolution (Pixels) 667 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
Unmounted Si Photodiode	320 - 1100 nm	33.64 mm²	5.8 x 5.8 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 320 - 1100 nm Active Area 33.64 mm² Sensing Area 5.8 x 5.8 mm Peak Response Wavelength 960 nm (Typical) Detection Wavelength Region UV, Visible, Near IR Sensor Type Silicon Dark Current 50 pA (Maximum) Package Metal, TO-8 Cooling System None Rise Time 10 μs (Typical) Capacitance 4.3 nF (Typical) Specific Detectivity 2.761905 × 10¹⁴ cmHz^1/2/W (Calculated) Noise Equivalent Power 2.1 × 10^-15 W/Hz^1/2 (Typical) Reverse Voltage 30 V (Maximum) Photosensitivity 0.6 A/W (Typical) Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	420 nm (Peak Sensitivity) 300 - 650 nm	490.9 mm²	Ø 25 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 35 x 192 mm Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Weight 270 g Key Features Wide Sectral Bandwidth Response Operating Temperature 5 - 50 °C Active Area 490.9 mm² Sensing Area Ø 25 mm Supply Voltage ±11.5 V, ±15.5 V ±18 V (Maximum) Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Active Area Diameter 25 mm Supply Current -8 to 11 mA (Maximum) Radiant Sensitivity 0.088 A/W (Cathode, Typical) Input Voltage ±11.5 V to ±15.5 V, ±18 V (Maximum) Settling Time 10 s (Maximum) Blue Sensitivity Index 11 (Typical, Cathode) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 500 mV - 1.4 V (1 MΩ) Luminous Sensitivity 95 μA/lm (Typical, Cathode), 5 × 10⁶ V/lm (Minimum, Anode), 60 μA/lm (Minimum, Cathode), 2 × 10⁷ V/lm (Typical, Anode) Output Voltage 10 V (10 kΩ, Maximum) Input Current -8 to 11 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	420 nm (Peak Sensitivity) 300 - 650 nm	1662.0 mm²	Ø 46 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 60 mm 51 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 650 nm Active Area 1662.0 mm² Sensing Area Ø 46 mm Supply Voltage -2 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Dark Current 100 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Active Area Diameter 46 mm Rise Time 2.7 ns (Typical) Photocathode Material Bialkali Anode Current 670 μA (Maximum) Pulse Linearity 200 mA (Anode, 5% Deviation) 100 mA (Anode, 2% Deviation) Anode to Cathode Voltage -2.7 kV Transit Time Spread 1.1 ns (Typical) Blue Sensitivity Index 10.5 (Typical, Cathode) Dynode Stages 12 Transit Time 40 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 90 μA/lm (Typical, Cathode), 270 A/lm (Typical, Anode) Gain 3 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Streak Camera	200 - 900 nm	0.675 mm²	150 μm x 4.5 mm (±5%)	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Wavelength Range 200 - 900 nm Power Consumption ~ 300 W Active Area 0.675 mm² Sensing Area 150 μm x 4.5 mm (±5%) Supply Voltage 100 V 240 V (50/60 Hz) Detection Wavelength Region UV, Visible, Near IR Sensor Type S20 Photocathode Streak Tube Resolution (Pixels) 2048 x 2048 Frame Rate 100 FPS (Full Frame) Power Supply AC 100 V to AC 240 V, 50 Hz/60 Hz Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	520 nm (Peak Sensitivity) 300 - 740 nm	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 520 nm (Peak Sensitivity) 300 - 740 nm Weight 100 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Supply Voltage 11.5 - 15.5 V Peak Response Wavelength 520 nm Detection Wavelength Region UV, Visible Sensor Type GaAsP Photocathode Active Area Diameter 5 mm Rise Time 1 ns (Typical) Dark Count Rate 6 kHz (Typical) 18 kHz (Maximum) Quantum Efficiency 40% (Cathode, Minimum) 45% (Cathode, Typical) Radiant Sensitivity 0.189 A/W (Cathode, Typical) 0.168 A/W (Cathode, Minimum) 1 × 10⁵ A/W (Anode, Minimum) 1.9 × 10⁵ A/W (Anode, Typical) Input Voltage +18 V (Maximum), +11.5 to +15.5 V Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Gain 2 × 10⁶ (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	350 - 1000 nm	7.069 mm² (3 mm)	Ø 3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 350 - 1000 nm Active Area 7.069 mm² (3 mm) Sensing Area Ø 3 mm Peak Response Wavelength 600 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System None Active Area Diameter 3 mm Resolution (Pixels) 2836 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	230 - 700 nm 400 nm (Peak Sensitivity)	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 16 mm (Tube Size) Wavelength Range 230 - 700 nm 400 nm (Peak Sensitivity) Active Area 50.27 mm² Sensing Area Ø 8 mm Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Photocathode Material Ultra bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 0.13 A/W (Cathode, Typical) Anode to Cathode Voltage 1.1 kV Transit Time Spread 200 ps (Typical) Blue Sensitivity Index 15.5 (Typical, Cathode) Dynode Stages 10 Transit Time 2.7 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 135 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 100 μA/lm (Minimum, Cathode), 270 A/lm (Typical, Anode) Gain 2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 900 nm	490.9 mm²	Ø 25 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 900 nm Active Area 490.9 mm² Sensing Area Ø 25 mm Supply Voltage 1 kV Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type Multialkali Photocathode Dark Current 25 nA (Maximum, After 30 Min) 5 nA (Typical, After 30 Min) Active Area Diameter 25 mm Rise Time 15 ns (Typical) Photocathode Material Multialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 51000 A/W (Anode, Typical) 0.065 A/W (Cathode, Typical) Anode to Cathode Voltage 1.5 kV Dynode Stages 11 Transit Time 60 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 230 μA/lm (Typical, Cathode), 30 A/lm (Minimum, Anode), 130 μA/lm (Minimum, Cathode), 180 A/lm (Typical, Anode) Gain 7.8 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	630 nm (Peak Sensitivity) 380 - 900 nm	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 630 nm (Peak Sensitivity) 380 - 900 nm Weight 106 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Supply Voltage 11.5 - 15.5 V Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type GaAs Photocathode Active Area Diameter 5 mm Rise Time 1 ns (Typical) Dark Count Rate 7.5 kHz (Typical) 22.5 kHz (Maximum) Quantum Efficiency 14% (Cathode, Minimum) 19% (Cathode, Typical) Radiant Sensitivity 0.095 A/W (Cathode, Typical) 0.07 A/W (Cathode, Minimum) 42000 A/W (Anode, Minimum) 95000 A/W (Anode, Typical) Input Voltage +18 V (Maximum), +11.5 to +15.5 V Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Gain 2 × 10⁶ (Typical, Anode) Input Current 12 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	320 - 900 nm	9 mm²	3 x 3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 320 - 900 nm Active Area 9 mm² Sensing Area 3 x 3 mm Peak Response Wavelength 500 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System None Resolution (Pixels) 3600 Pixel Size 50 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	1591.92 mm²	221.1 x 7.2 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications X-Ray Operating Temperature 0 - 40 °C Power Consumption ~ 45 W Active Area 1591.92 mm² Sensing Area 221.1 x 7.2 mm Supply Voltage 15 V Resolution (Pixels) 4608 x 150 Pixel Size 48 x 48 μm Line Rate 20 kHz (57.6 m/min) 15 kHz (86.4 m/min) Bit Depth 12 bit Scanning Method Time Delay Integration Digital Binning Max. 15 kHz (86.4 m/min) Tube Voltage Range ~ 25 - 130 kV Line Speed 0.576 m/min to 57.6 m/min Power Supply DC +15 V Scintillator CsI Scintillator Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT Assembly	380 nm (Peak Sensitivity) 300 - 700 nm	4 mm²	2 x 2 mm (x 64 channels)	Contact Supplier	Add to cart to request quote
Product Code Dimensions 30 x 30 mm Wavelength Range 380 nm (Peak Sensitivity) 300 - 700 nm Active Area 4 mm² Sensing Area 2 x 2 mm (x 64 channels) Supply Voltage -800 V Peak Response Wavelength 380 nm Detection Wavelength Region UV, Visible Dark Current 2 nA (Maximum, After 30 Min) 200 pA (Typical, After 30 Min) Rise Time 1 ns (Typical) Photocathode Material Extended Green Bialkali Anode Current 455 μA (Maximum) Pulse Linearity 600 μA (Anode, 5% Deviation) 300 μA (Anode, 2% Deviation) Radiant Sensitivity 63000 A/W (Anode, Typical) 0.125 A/W (Cathode, Typical) Anode to Cathode Voltage -1 kV Transit Time Spread 380 ps (Typical) Blue Sensitivity Index 14 (Typical, Cathode) Dynode Stages 12 Transit Time 12 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 160 μA/lm (Typical, Cathode), 20 A/lm (Minimum, Anode), 120 μA/lm (Minimum, Cathode), 80 A/lm (Typical, Anode) Gain 5 × 10⁵ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	400 nm (Peak Sensitivity) 185 - 700 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 50 x 18 x 25 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 700 nm Applications Single Photon Counting Weight 42 g Key Features Low Dark Counts Wide Sectral Bandwidth Response Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 12 mA (Maximum) Control Voltage 500 mV - 1.1 V (30 kΩ) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Radiant Sensitivity 2.2 × 10⁵ A/W (Anode, Typical) 0.11 A/W (Cathode, Typical) Input Voltage +11.5 V to +15.5 V, 18 V (Maximum) Settling Time 200 ms (Maximum) Blue Sensitivity Index 13.5 (Typical, Cathode) Luminous Sensitivity 105 μA/lm (Typical, Cathode), 80 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 210 A/lm (Typical, Anode) Input Current 12 mA (Maximum) Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface USB 3.0 Applications X-Ray Operating Temperature 40 °C Power Consumption ~ 8 W Supply Voltage 24 V Bit Depth 14 bit Lenslet Pitch 400 μm Operating Relative Humidity 30 - 70% Sensor Pitch 400 μm Tube Voltage Range ~ 25 - 160 kV Line Speed 4 m/min to 200 m/min Power Supply DC +24 V Scintillator Gd-scintillator Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Multianode Voltage Output PMT Module	185 - 650 nm 400 nm (Peak Sensitivity)	12.8 mm²	800 μm x 16 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 60 x 44.9 x 85.3 mm Wavelength Range 185 - 650 nm 400 nm (Peak Sensitivity) Weight 185 g Operating Temperature 5 - 45 °C Active Area 12.8 mm² Sensing Area 800 μm x 16 mm Supply Voltage ±11.5 V, ±15.5 V ±16 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible Radiant Sensitivity 0.11 A/W (Cathode, Typical) Input Voltage ±11.5 to ±15.5 V, ±16 V (Maximum) Blue Sensitivity Index 13.5 (Typical, Cathode) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 2 - 3.2 V Luminous Sensitivity 105 μA/lm (Typical, Cathode), 9 × 10⁶ V/lm (Minimum, Anode), 90 μA/lm (Minimum, Cathode), 3.15 × 10⁷ V/lm (Typical, Anode) Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	630 nm (Peak Sensitivity) 300 - 920 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 21.5 x 102 mm Wavelength Range 630 nm (Peak Sensitivity) 300 - 920 nm Weight 37 g Key Features Low Power Consumption Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Supply Voltage 2.8 - 5.5 V 5.5 V (Maximum) Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Dark Current 100 nA (Maximum, After 30 Min) 10 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 2.7 mA (Maximum) Radiant Sensitivity 1.5 × 10⁵ A/W (Anode, Typical) 0.078 A/W (Cathode, Typical) Input Voltage +2.8 V to +5.5 V, 5.5 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 500 mV - 1.1 V (1 MΩ) Luminous Sensitivity 500 μA/lm (Typical, Cathode), 350 A/lm (Minimum, Anode), 350 μA/lm (Minimum, Cathode), 1000 A/lm (Typical, Anode) Input Current 2.7 mA (Maximum) Ripple Noise 500 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	290 - 900 nm	1.69 mm²	1.3 x 1.3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 290 - 900 nm Active Area 1.69 mm² Sensing Area 1.3 x 1.3 mm Peak Response Wavelength 500 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System None Resolution (Pixels) 16663 Pixel Size 10 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
Image Intensifier	280 - 820 nm 480 - 530 nm (Peak Sensitivity)	135 mm²	13.5 x 10 mm	Contact Supplier	Add to cart to request quote
Product Code Wavelength Range 280 - 820 nm 480 - 530 nm (Peak Sensitivity) Operating Temperature -20 to 40 °C Active Area 135 mm² Sensing Area 13.5 x 10 mm Detection Wavelength Region UV, Visible, Near IR Photocathode Material Enhanced Red GaAsP Quantum Efficiency 45% Resolution (lp/mm) 64 lp/mm Equivalent Background Input 8 × 10^-15 W/cm² Luminous Gain 2.5 × 10⁴ (lm/m²)/lx Vibration 10 Hz to 55 Hz, 0.35 mm (p-p) (Maximum) Radiant Emittance Gain 1.3 × 10⁴ (W/m²)/ (W/m²) Radiant Sensitivity 0.192 A/W Luminous Sensitivity 800 μA/lm Stage of Microchannel Plates 1, 2 Maximum Shock 300 m/s² (30G), 18 ms Storage Temperature -55 to 60 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	410 nm (Peak Sensitivity) 185 - 710 nm	192 mm²	8 x 24 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 410 nm (Peak Sensitivity) 185 - 710 nm Active Area 192 mm² Sensing Area 8 x 24 mm Supply Voltage 1 kV Peak Response Wavelength 410 nm Detection Wavelength Region UV, DUV, Visible Sensor Type Bialkali Photocathode Dark Current 2 nA (Maximum, After 30 Min) 200 pA (Typical, After 30 Min) Rise Time 2.2 ns (Typical) Photocathode Material Low Noise Bialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 8.4 × 10⁵ A/W (Anode, Typical) 0.07 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Blue Sensitivity Index 8 (Typical, Cathode) Dynode Stages 9 Transit Time 22 ns (Typical) Window Material UV glass Luminous Sensitivity 100 μA/lm (Typical, Cathode), 1000 A/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 1200 A/lm (Typical, Anode) Gain 1.2 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	400 nm (Peak Sensitivity) 230 - 700 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 50 x 22 x 22 mm Wavelength Range 400 nm (Peak Sensitivity) 230 - 700 nm Applications Single Photon Counting Weight 76.5 g Key Features Low Dark Counts Wide Sectral Bandwidth Response Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Supply Voltage 2.8 - 5.5 V 5.5 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, Visible Dark Current 10 nA (Maximum, After 30 Min) 1 nA (Typical, After 30 Min) Active Area Diameter 8 mm Rise Time 570 ps (Typical) Supply Current 2.7 mA (Maximum) Control Voltage 500 mV - 1.1 V (1 MΩ) Ripple Noise 100 μV Storage Temperature -20 to 50 °C Radiant Sensitivity 2.6 × 10⁵ A/W (Anode, Typical) 0.13 A/W (Cathode, Typical) Input Voltage +2.8 V to +5.5 V, 5.5 V (Maximum) Settling Time 10 s (Maximum) Blue Sensitivity Index 15.5 (Typical, Cathode) Luminous Sensitivity 135 μA/lm (Typical, Cathode), 100 A/lm (Minimum, Anode), 100 μA/lm (Minimum, Cathode), 270 A/lm (Typical, Anode) Input Current 2.7 mA (Maximum) Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	420 nm (Peak Sensitivity) 300 - 700 nm	529 mm²	23 x 23 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 30 x 30 mm (Tube Size) Wavelength Range 420 nm (Peak Sensitivity) 300 - 700 nm Active Area 529 mm² Sensing Area 23 x 23 mm Supply Voltage 900 V Peak Response Wavelength 420 nm Detection Wavelength Region UV, Visible Sensor Type Bialkali Photocathode Dark Current 20 nA (Maximum, After 30 Min) 2 nA (Typical, After 30 Min) Rise Time 1.3 ns (Typical) Photocathode Material Extended Green Bialkali Anode Current 100 μA (Maximum) Pulse Linearity 60 mA (Anode, 5% Deviation) 20 mA (Anode, 2% Deviation) Radiant Sensitivity 1.5 × 10⁵ A/W (Anode, Typical) 0.125 A/W (Cathode, Typical) Anode to Cathode Voltage 1 kV Transit Time Spread 270 ps (Typical) Blue Sensitivity Index 14 (Typical, Cathode) Dynode Stages 12 Transit Time 5.8 ns (Typical) Window Material Borosilicate glass Luminous Sensitivity 160 μA/lm (Typical, Cathode), 50 A/lm (Minimum, Anode), 120 μA/lm (Minimum, Cathode), 190 A/lm (Typical, Anode) Gain 1.2 × 10⁶ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	290 - 900 nm	1.69 mm²	1.3 x 1.3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 290 - 900 nm Active Area 1.69 mm² Sensing Area 1.3 x 1.3 mm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System None Resolution (Pixels) 16663 Pixel Size 10 μm Number Of Channels 1 Supplier Location Japan See product details More from HAMAMATSU
X-Ray Camera	-	-	-	Contact Supplier	Add to cart to request quote
Product Code Interface Camera Link Applications X-Ray Operating Temperature 40 °C Power Consumption ~ 11 W Supply Voltage 15 - 24 V Bit Depth 14 bit Lenslet Pitch 400 μm Operating Relative Humidity 30 - 80% Sensor Pitch 400 μm Tube Voltage Range ~ 25 - 160 kV Line Speed 4 m/min to 100 m/min Power Supply DC +15 V to +24 V Scintillator Gd-scintillator Storage Temperature -10 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
PMT (tube only)	450 nm (Peak Sensitivity) 185 - 900 nm	48 mm²	8 x 6 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions Ø 28 mm (Tube Size) Wavelength Range 450 nm (Peak Sensitivity) 185 - 900 nm Active Area 48 mm² Sensing Area 8 x 6 mm Supply Voltage 1 kV Peak Response Wavelength 450 nm Detection Wavelength Region UV, DUV, Visible, Near IR Sensor Type Multialkali Photocathode Rise Time 2.2 ns (Typical) Photocathode Material Multialkali Anode Current 100 μA (Maximum) Radiant Sensitivity 1.7 × 10⁶ A/W (Anode, Typical) 0.09 A/W (Cathode, Typical) Anode to Cathode Voltage 1.25 kV Transit Time Spread 1.2 ns (Typical) Blue Sensitivity Index 15 (Typical, Cathode) Dynode Stages 9 Transit Time 22 ns (Typical) Window Material UV Luminous Sensitivity 525 μA/lm (Typical, Cathode), 4000 A/lm (Minimum, Anode), 400 μA/lm (Minimum, Cathode), 10000 A/lm (Typical, Anode) Gain 1.9 × 10⁷ (Typical, Anode) Supplier Location Japan See product details More from HAMAMATSU
Voltage Output PMT Module	400 nm (Peak Sensitivity) 185 - 700 nm	50.27 mm²	Ø 8 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 51 x 24 x 25 mm Wavelength Range 400 nm (Peak Sensitivity) 185 - 700 nm Weight 90 g Operating Temperature 5 - 50 °C Active Area 50.27 mm² Sensing Area Ø 8 mm Supply Voltage ±11.5 V, ±15.5 V ±18 V (Maximum) Peak Response Wavelength 400 nm Detection Wavelength Region UV, DUV, Visible Active Area Diameter 8 mm Supply Current -8 to 20 mA (Maximum) Radiant Sensitivity 0.11 A/W (Cathode, Typical) Input Voltage ±11.5 to ±15.5 V, ±18 V (Maximum) Settling Time 200 ms (Maximum) Blue Sensitivity Index 13.5 (Typical, Cathode) Current to Voltage Coversion Factor 0.1 V/uA Control Voltage 500 mV - 1.1 V (30 kΩ) Luminous Sensitivity 105 μA/lm (Typical, Cathode), 8 × 10⁶ V/lm (Minimum, Anode), 80 μA/lm (Minimum, Cathode), 2.1 × 10⁷ V/lm (Typical, Anode) Output Voltage 10 V (10 kΩ, Maximum) Input Current -8 to 20 mA (Maximum) Ripple Noise 1 mV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Streak Camera	300 - 1060 nm	122.36 mm²	7 x 17.48 mm	Contact Supplier	Add to cart to request quote
Product Code Interface USB 2.0 Wavelength Range 300 - 1060 nm Spatial Resolution 530 nm (18 lp/mm) Key Features High Dynamic Range Single Shot Measurement Power Consumption ~ 100 W Active Area 122.36 mm² Sensing Area 7 x 17.48 mm Supply Voltage 100 V 240 V (60 Hz) Detection Wavelength Region UV, Visible, Near IR Temporal Resolution 5 ps Input Voltage ±5 V, 50Ω (Maximum) Sweep Frequency 1 kHz (Maximum) 100 Hz (Open Fixed Mode, Normal Mode, Maximum) Operation Mode FOCUS/OPERATE Power Supply AC 100 V - AC 240 V, 50 Hz/60Hz Sweep Time 500 ps - 10 ms Supplier Location Japan See product details More from HAMAMATSU
Multi-Pixel Photon Counting Detector	320 - 900 nm	9 mm²	3 x 3 mm	Contact Supplier	Add to cart to request quote
Product Code Interface Analog Wavelength Range 320 - 900 nm Active Area 9 mm² Sensing Area 3 x 3 mm Peak Response Wavelength 500 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type SPAD Cooling System None Resolution (Pixels) 3584 Pixel Size 50 μm Number Of Channels 16 Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	520 nm (Peak Sensitivity) 300 - 740 nm	196 mm²	14 x 14 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 38 x 38 x 55 mm Wavelength Range 520 nm (Peak Sensitivity) 300 - 740 nm Weight 105 g Operating Temperature 5 - 50 °C Active Area 196 mm² Sensing Area 14 x 14 mm Supply Voltage 4.5 - 5.5 V Peak Response Wavelength 520 nm Detection Wavelength Region UV, Visible Sensor Type GaAsP Photocathode Dark Current 50 nA (Maximum) 10 nA (Typical) Rise Time 1.1 ns (Typical) Radiant Sensitivity 3.8 × 10⁵ A/W (Anode, Typical) 0.189 A/W (Cathode, Typical) Input Voltage +4.5 to +5.5 V, +5.5 V (Maximum) Settling Time 10 s (Maximum) Control Voltage 500 mV - 1 V Luminous Sensitivity 850 μA/lm (Typical, Cathode), 1.7 × 10³ A/lm (Typical, Anode) Input Current 3.5 mA (Maximum) Ripple Noise 200 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Photon Counting PMT Module	375 nm (Peak Sensitivity) 300 - 650 nm	380.1 mm²	Ø 22 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 33 x 43 x 60 mm Wavelength Range 375 nm (Peak Sensitivity) 300 - 650 nm Applications Single Photon Counting Weight 111 g Operating Temperature 5 - 40 °C Active Area 380.1 mm² Sensing Area Ø 22 mm Supply Voltage 4.75 - 5.25 V 6 V (Maximum) Peak Response Wavelength 375 nm Detection Wavelength Region UV, Visible Active Area Diameter 22 mm Supply Current 100 mA (Maximum) Dark Count Rate 80 Hz (Maximum) 15 Hz (Typical) Output Pulse Width 9 ns Input Voltage +4.75 V to +5.25 V, 6 V (Maximum) Input Current 100 mA (Maximum) Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
Current Output PMT Module	380 - 900 nm 630 nm (Peak Sensitivity)	19.63495 mm²	Ø 5 mm	Contact Supplier	Add to cart to request quote
Product Code Dimensions 56 x 36 x 104 mm Wavelength Range 380 - 900 nm 630 nm (Peak Sensitivity) Weight 453 g Operating Temperature 5 - 35 °C Active Area 19.63495 mm² Sensing Area Ø 5 mm Supply Voltage 11.5 - 15.5 V 18 V (Maximum) Peak Response Wavelength 630 nm Detection Wavelength Region UV, Visible, Near IR Sensor Type GaAs Photocathode GaAsP Active Area Diameter 5 mm Rise Time 1 ns (Typical) Supply Current 30 mA (Maximum) Dark Count Rate 125 Hz (Typical) 375 Hz (Maximum) Radiant Sensitivity 1.9 × 10⁵ A/W (630 nm, Anode, Typical) Input Voltage +11.5 to +15.5 V, +18 V (Maximum) Settling Time 200 ms (Maximum) Control Voltage 500 - 800 mV Input Current 30 mA (Maximum) Ripple Noise 600 μV Storage Temperature -20 to 50 °C Supplier Location Japan See product details More from HAMAMATSU
sCMOS Camera	300 - 900 nm	177.1561 mm²	13.31 x 13.31 mm	Contact Supplier	Add to cart to request quote
Product Code Interface USB 3.0 Wavelength Range 300 - 900 nm Applications Live-Cell Imaging X-Ray Key Features Board Level Can be Triggered Operating Temperature 0 - 40 °C Power Consumption ~ 9 W Active Area 177.1561 mm² Sensing Area 13.31 x 13.31 mm Supply Voltage 12 V Detection Wavelength Region UV, Visible, Near IR Sensor Type sCMOS Resolution (Pixels) 2048 x 2048 Read Noise 2.3 e^- (RMS, Typical) 1.6 e^- (Median, Typical) Bit Depth 16 bit Lens Mount C-Mount Frame Rate 30 FPS (Full Frame) 25655 FPS (512 × 8 ROI) Exposure Time 1 ms - 30 s Trigger Mode Edge trigger Global reset edge trigger Global reset level trigger Synchronous readout trigger Dynamic Range 85.11 dB (18000:1, Typical) Full Well Capacity 30000 e^- Operating Relative Humidity 30 - 80% Power Supply DC+12 V Storage Temperature -10 to 50 °C Digital Binning 2×2, 4×4 Supplier Location Japan See product details More from HAMAMATSU